Abstract: A fully amorphous thin film material that is related to ferroelectric compositions which is grown at low temperature, e.g., below 400° C., to yield a material with voltage independent capacitance, capacitance density of from about 1000 to about 10000 nF/cm2, leakage of <10−7 A/cm2, root mean square roughness <1 nanometer independent of film thickness, and an inverse capacitance that scales as a ratio of film thickness, reflecting uniform dielectric constant throughout the film. The film material may be employed for various capacitor structures, including decoupling capacitors, DRAM storage capacitors, feedthrough capacitors, bypass capacitors, capacitors for RC filters and capacitors for switched capacitor filters.

Abstract: A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(pmdeta), Ta(OiPr)4(thd) and Bi(thd)3(pmdeta) which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as &bgr;-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and/or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.

Abstract: An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises a pre-oxidation treatment unit, which may for example comprise a scrubber, an oxidation unit such an electrothermal oxidizer, and a post-oxidation treatment unit, such as a wet or dry scrubber. The effluent gas stream treatment system of the invention may utilize an integrated oxidizer, quench and wet scrubber assembly, for abatement of hazardous or otherwise undesired components from the effluent gas stream. Gas or liquid shrouding of gas streams in the treatment system may be provided by high efficiency inlet structures.