Patents Represented by Attorney Robert O. Groover, Jr.

Find this attorney in the Justia Lawyer Directory

  • Memory with p-channel cell access transistors
    Patent number: 4623989
    Abstract: A static random access memory wherein all cells have p-channel access transistors, p-channel driver transistors, and n-channel loads. The access transistors have a width to length ratio which is greater than the width to length ratio of the driver transistors.The bit lines are precharged close to VSS, and the wordlines are held near VCC in the off state. Thus the operating signals in the array of the SRAM of the present invention are opposite to those in SRAMs of the prior art.
    Type: Grant
    Filed: August 31, 1983
    Date of Patent: November 18, 1986
    Assignee: Texas Instruments Incorporated
    Inventor: Terence G. Blake