Patents Represented by Attorney Robert R. Snider

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  • GaP light emitting element substrate with oxygen doped buffer
    Patent number: 5349208
    Abstract: To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.
    Type: Grant
    Filed: November 5, 1993
    Date of Patent: September 20, 1994
    Assignee: Shin Etsu Handotai Kabushiki Kaisha
    Inventors: Munehisa Yanagisawa, Susumu Higuchi, Yuuki Tamura