Abstract: A memory system having a memory controller and a daisy chain of memory chips. The memory controller is coupled to memory chips in the daisy chain of memory chips by an address/command bus chain. The memory controller is coupled to memory chips in the daisy chain of memory chips by a data bus chain having a number of data bus bits. The data bus chain has a first portion of data bus bits dedicated to transmitting write data from the memory controller to a memory chip. The data bus chain has a second portion of data bus bits dedicated to transmitting read data from a memory chip to the memory controller. Apportionment of data bus bits between the first portion and the second portion is programmable. Programming is done by pin connection, scanning of a value, or by request from a processor coupled to the memory controller.

Abstract: A memory chip suitable for use in a daisy chain of memory chips. The memory chip receives an address/command word on a first input, determines if the address command word is directed to the memory chip; if so, the memory chip accesses an array on the memory chip. If not, the memory chip re-drives the address/command word on a first output. Write data is received as part of the address/command word or from a first data bus port. A bus clock is received and is used to receive and transmit information on the first input, the first output, the first data bus port and the second data bus port. The memory chip is incorporated into a design structure that is embodied in a computer readable medium used for designing, manufacturing, or testing the memory chip.

Abstract: An apparatus and method is disclosed for flushing a cache in a computing system. In a multinode computing system a cache in a first node may contain modified data in an address space of a second node. The cache in the first node must be purged prior to shutting down the first node. The computing system uses a random class replacement scheme for the cache. A cache flush routine sets a cache flush mode in a class replace select mechanism, overriding the random class replacement scheme. With the random class replacement scheme overridden, a minimum number of fetches will flush all the cache lines in the cache, each fetch loading the cache with a cache line not already in the cache. No additional delay penalty is incurred in a critical path through which fetches and stores to the cache must pass.

Abstract: A method is disclosed for measuring alignment of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias or misalignment. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias and misalignment of the polysilicon shapes relative to the silicon area.

Abstract: A system and method for supporting character interactive input/output operation in a half-duplex block-mode environment including a workstation and a server. Keystrokes at the workstation received into an auto enter, non-display entity on the workstation display are automatically transferred as entered from the workstation to a server application which processes the keystroke and responds in a manner appropriate to the context of the application.

Abstract: A semiconductor storage array has a first array portion on a first plane of circuitry and a second array portion on a second plane of circuitry. A composite bit line and/or a composite word line is divided and arranged to have a first portion on the first array portion and a second portion on the second array portion. The two portions of the composite word line or the composite bit line are on different planes of circuitry, and three-dimensional interconnections connect proximal ends of the word line portions, or proximal ends of the bit line portions. A word line driver drives the word line portions in parallel. A bit line driver drives the bit line portions in parallel. Signal propagation times down the composite word or bit lines are significantly less than signal propagation times down corresponding undivided word or bit lines.

Abstract: An apparatus and method is disclosed for providing capacity on demand using control to alter latency and/or bandwidth on a signaling bus in a computer system. If additional capacity is required, authorization is requested for additional capacity. If authorized, bandwidth of the signaling bus is increased to provide additional capacity in the computing system. Alternatively, upon authorization, latency of data transmissions over the signaling bus is reduced. In another alternative, upon authorization, memory timings are adjusted to speed up memory fetches and stores.

Abstract: Methods and apparatus are provided that allow an electronic system having a signaling bus with a fault on a signaling conductor to operate at a degraded performance. A block of data is transferred from a first electronic unit to a second electronic unit over the signaling bus. A transmission sequence sends the block of data using all of the nonfaulty signaling conductors using a minimum number of beats required to complete the transmission.

Abstract: A memory system having a memory controller and a memory. The memory controller is coupled to a processor and to the memory. The memory comprises one or more daisy chains of memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. A daisy chain of memory chips can include memory chips on multiple carriers, or the daisy chain of memory chips can all be attached to a single carrier.

Abstract: A computer system having a memory system, the memory system having a memory controller and a memory. The memory comprises one or more daisy chains of self timed memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. Access timing on each memory chip is determined by a self time block on each memory chip.

Abstract: A memory chip suitable for use in a daisy chain of memory chips. The memory chip receives an address/command word on a first input, determines if the address command word is directed to the memory chip; if so, the memory chip accesses an array on the memory chip respondent to the address/command word. If not, the memory chip re-drives the address/command word on a first output. Write data is received as part of the address/command word or from a first data bus port. Read data is read from the array or is received from a second data bus port for subsequent re-driving on the first data bus port. A bus clock is received and is used to receive and transmit information on the first input, the first output, the first data bus port and the second data bus port.

Abstract: An apparatus and method are disclosed for measuring bias of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias of the polysilicon shapes relative to the silicon area.

Abstract: An apparatus and method is disclosed for improving timing margins of logic paths on a semiconductor chip. Typical logic embodiments, such as CMOS (Complementary Metal Oxide Semiconductor), have path delays that become shorter as supply voltage is increased. Embodiments of the present invention store product data on each particular chip. The product data includes, for examples, but not limited to, a voltage range having a low limit voltage and a high limit voltage, a limit temperature, and performance of the particular chip in storage for the particular chip. Each chip has a voltage controller, a timer, and a thermal monitor. The voltage controller communicates with a voltage regulator and dynamically causes a voltage supply coupled to the chip to be as high as possible in the voltage range, subject to the limit temperature.

Abstract: An apparatus and method are disclosed for an improved semiconductor interconnect scheme using a simplified process. In an embodiment of the apparatus, a polysilicon shape is formed on a silicon area. The polysilicon shape is created having a bridging vertex. When a spacer is created on the polysilicon shape, the spacer width is formed to be small enough near the bridging vertex to allow a silicide bridge to form that creates an electrical coupling between the silicon area and the bridging vertex. Semiconductor devices and circuits are created using the improved semiconductor interconnect scheme using the simplified process.

Abstract: A fair hierarchical arbiter comprises a number of arbitration mechanisms, each arbitration mechanism forwarding winning requests from requestors in round robin order by requestor. In addition to the winning requests, each arbitration mechanism forwards valid request bits, the valid request bits providing information about which requestor originated a current winning request, and, in some embodiments, about how many separate requesters are arbitrated by that particular arbitration mechanism. The fair hierarchical arbiter outputs requests from the total set of separate requestors in a round robin order.

Abstract: An apparatus and method is disclosed for reducing power consumption in a computing system by moving pages allocated in real memory portions to other real memory portions. When a real memory portion contains no pages, that memory portion can be put into a Deep Power Down (DPD) state that has lower power consumption than when that memory portion is in normal operation. The computing system can also be aware of power consumption of each real memory portion, and, with such awareness, the invention teaches consolidation of pages from real memory portions having relatively higher power consumption to real memory portions having relatively lower power consumption.

Abstract: A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.

Abstract: An apparatus and method is disclosed for determining polysilicon conductor width for 3-dimensional field effect transistors (FinFETs). Two or more resistors are constructed using a topology in which polysilicon conductors are formed over a plurality of silicon “fins”. A first resistor has a first line width. A second resistor has a second line width. The second line width is slightly different than the first line width. Advantageously, the first line width is equal to the nominal design width used to make FET gates in the particular semiconductor technology. Resistance measurements of the resistors and subsequent calculations using the resistance measurements are used to determine the actual polysilicon conductor width produced by the semiconductor process. A composite test structure not only allows calculation of the polysilicon conductor width, but provides proof that differences in the widths used in the calculations do not introduce objectionable etching characteristics of the polysilicon conductors.

Abstract: An eFuse reference cell on a chip provides a reference voltage that is greater than a maximum voltage produced by an eFuse cell having an unblown eFuse on the chip but less than a minimum voltage produced by an eFuse cell having a blown eFuse on the chip. A reference current flows through a resistor and an unblown eFuse in the eFuse reference cell, producing the reference voltage. The reference voltage is used to create a mirrored copy of the reference current in the eFuse cell. The mirrored copy of the reference current flows through an eFuse in the eFuse cell. A comparator receives the reference voltage and the voltage produced by the eFuse cell. The comparator produces an output logic level responsive to the voltage produced by the eFuse cell compared to the reference voltage.

Abstract: An apparatus and method to improve a cycle time of a Read Only Memory (ROM). Loading of each bit line is controlled such that no bit line has less than a specified loading fraction of a loading of a maximally loaded bit line. No additional space or additional circuitry is required. Four NFET pair arrangements are personalizable by via placement by a designer or design automation program. One of the NFET pair arrangements is usable to pad load on a bit line without altering a logical personalization of the bit line. Proper selection from the four NFET pair arrangements ensure that no bit line has less than the specified loading fraction of the loading of the maximally loaded bit line, as well as providing proper logical personality of the bit line.

Abstract: The present invention relates to the preparation of encapsulated products containing a solid dosage form prepared with up to 35% of an edible matrix material. The composition may be introduced into the capsule as a powder and the capsule containing the powder mixture may then be heated to melt the matrix. The resulting capsule products exhibit the favorable texture of a capsule in conjunction with the hardness, shelf stability and security of the solid formulation. The composition of the present invention may be prepared and used as a direct tableting granulation as well as the filler or core for the capsule product. A method and corresponding apparatus are likewise disclosed and contemplated herein.