Abstract: An NAND circuit has a stacked structure having at least one symmetric NFET at a bottom of the stack. More particularly, the circuit has a stacked structure which includes an asymmetric FET and a symmetric FET. The symmetric FET is placed at the bottom of the stacked structure closer to ground than the asymmetric FET.

Abstract: A method for enhancing the privacy of recipients of personalizing text messages such as advertisements delivered to communication terminals such as cellular telephones. A common carrier such as a cellular telephone service provider gathers personal information from a subscriber at the time the subscriber signs on for service and receives a communication terminal. The carrier loads the terminal with a table that assigns variables to elements of personal information. The carrier accepts messages such as advertisements for distribution to subscribers. These messages use the variables that the carrier has loaded into the subscribers' terminals. When such a message is received, a subscriber's terminal replaces the variables with the elements of personal information by referring to the table.

Abstract: A method is provided for operating an interface between a first unit and a second unit supplying its data. The method includes switching control between LSSD_B and LSSD_C clocks and system clock (CLK) to provide a test mode of operation and a functional mode of operation to optimize setup and hold times depending on conditions under which the unit is operating. In the test mode, data is launched by the LSSD_C clock. In the functional mode, the data is launched by the system clock (CLK) to RAM. A method is also provided to determine which memory inputs should use a circuit that provides adequate setup and hold margins.

Abstract: A method and apparatus includes determining a number of planned starts of a product during a predetermined time period for future processing, averaging the number of planned starts for the predetermined time period, and setting a production rate for a first range based on the average number of planned starts.

Abstract: The invention generally relates to systems and methods for modeling I/O simultaneous switching noise, and, more particularly, to systems and methods for modeling I/O simultaneous switching noise in a selected chip window area while accounting for the effect of current sharing among neighbors. A method includes determining a current sharing factor of areas of an integrated circuit (IC) chip package, and determining an offload scaling factor of the IC chip package based upon the current sharing factor and numbers of I/O devices in neighboring areas of the IC chip package.

Abstract: A system and method is provided to facilitate subscriber driven media agnostic content delivery across same or different networks. The method includes receiving preferences from a sending client and a receiving client and receiving content of a first media type over a network. The method further includes sending the content or a reference to the content to the receiving client in a preferred media type and to a preferred device in accordance with at least one preference of the receiving client. The method also includes notifying at least the receiving client that the content is to be received by the preferred device.

Abstract: The present invention generally relates to a circuit structure and a method of manufacturing a circuit, and more specifically to an electrostatic discharge (ESD) circuit with a through wafer via structure and a method of manufacture. An ESD structure includes an ESD active device and at least one through wafer via structure providing a low series resistance path for the ESD active device to a substrate. An apparatus includes an input, at least one power rail and an ESD circuit electrically connected between the input and the at least one power rail, wherein the ESD circuit comprises at least one through wafer via structure providing a low series resistance path to a substrate. A method, includes forming an ESD active device on a substrate, forming a ground plane on a backside of the substrate and forming at least one through wafer via electrically connected to a negative power supply of the ESD active device and the ground plane to provide a low series resistance path to the substrate.

Abstract: A tool and method is provided to graphically correlate process and test data with specific chips on a multi-project wafer. The tool and method is configured and implemented to select certain sites and export these sites to an industry standard map that can be used in a variety of chip picking or test tools. In one embodiment, the method includes importing a wafer floor plan with chips of different design parameters and importing manufacturing logistical information of the chips. The method further includes graphically rendering each chip on the wafer to scale within a unit cell using the imported wafer floor plan and the manufacturing logistical information.

Abstract: Three dimensional vertical e-fuse structures and methods of manufacturing the same are provided herein. The method of forming a fuse structure comprises providing a substrate including an insulator layer and forming an opening in the insulator layer. The method further comprises forming a conductive layer along a sidewall of the opening and filling the opening with an insulator material. The vertical e-fuse structure comprises a first contact layer and a second contact layer. The structure further includes a conductive material lined within a via and in electrical contact with the first contact layer and the second contact layer. The conductive material has an increased resistance as a current is applied thereto.

Abstract: Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.

Abstract: Integrated structures having high performance CMOS active devices mounted on passive devices are provided. The structure includes an integrated passive device chip having a plurality of through wafer vias, mounted to a ground plane. The structure further includes at least one CMOS device mounted on the integrated passive device chip using flip chip technology and being grounded to the ground plane through the through wafer vias of the integrated passive device chip.

Abstract: A phase change memory (PCM) cycle timer and associated method are disclosed. A system includes at least one reference phase change element (PCE). The system also includes a circuit that performs a write operation on the at least one reference PCE and substantially immediately thereafter continuously senses and returns a value of a resistance of the at least one reference PCE throughout a settling time of the at least one reference PCE.

Abstract: A method of cooling a resistor is provided. The method includes forming a first electrical insulator having a high thermal conductivity in thermal contact with an electrically resistive pathway and forming a substrate adjacent the electrical insulator. The method further includes forming a first electrical conductor having a high thermal conductivity within the second substrate and in thermal contact with the electrical insulator.

Abstract: A containment device includes a base, vertical walls extending from the base and an open end for accepting the mailpieces therein. The containment device, furthermore, has a slot formed in at least one of the vertical walls thereof. The containment device also includes a recess extending on an underside of the base between the vertical walls; a lip extending outward from an edge of the vertical walls; detents provided in the lip of opposing vertical walls of the vertical walls; and protrusions extending beyond the base and structured and adapted to mate with detents of a lower container in a stacked configuration of containers.

Abstract: A method of locating preferred services includes searching an augmented spatial index, which is based on a user's determined preferred services. Additionally, the method includes indicating a location of a currently-sought preferred service.

Abstract: A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

Abstract: A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region.

Abstract: A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

Abstract: Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer comprising a substrate, buried oxide layer (BOX) and silicon (SOI) film. The method further includes forming a plate on a sidewall of the deep trench structure in the substrate by an implant process. The implant processes contaminate exposed edges of the SOI film in the deep trench structure. The method further includes removing the contaminated exposed edges of the SOI film by an etching process to form a void in the SOI film. The method further includes growing epitaxial Si in the void, prior to completing a capacitor structure.