Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Abstract: A pressure sensing apparatus including a thin disc of a metal having a ceramic material layer and piezoresistive elements formed thereon. A surface of the disc is bonded to a diaphragm assembly on a pressure port base constructed of a low cost metal. The bonding process is performed at low temperatures, (<700° C.), so that the diaphragm assembly and pressure port do not require high temperature corrosion resistance, and can thus be formed of less expensive materials. The inventive apparatus provides a lower cost alternative to conventional high pressure sensors since less material is used, less expensive materials are used, and fabrication is less complex. The inventive apparatus is also more reliable and exhibits greater thermal stability than conventional high pressure sensors.

Abstract: A gas flow sensor system, and method for gas flow rate measurement and self-calibration to overcome problems caused by degradation. Gas flow rate is accurately measured by determining the power dissipated at a constant differential temperature of a gas flow sensor, under conditions where its power dissipation is independent of its resistance. The gas flow sensor is adjusted to a predefined differential temperature compared to the temperature of the gas. In addition, variations in heat transfer coefficient (h) of a gas flow sensor are corrected by self-calibration of the gas flow sensor system. Experimentally established correction factors are applied to the gas flow sensor, to compensate for changes in its heat transfer coefficient (h) caused by degradation of the gas flow sensor. This offsets the adverse effects of use and aging of the gas flow sensor, thus reducing errors in gas flow measurement.

Abstract: It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

Abstract: An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

Abstract: The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics.