Abstract: The semiconductor device according to the present invention includes a first insulating layer made of a material containing Si and O, a groove shaped by digging down the first insulating layer, an embedded body, embedded in the groove, made of a metallic material mainly composed of Cu, a second insulating layer, stacked on the first insulating layer and the embedded body, made of a material containing Si and O, and a barrier film, formed between the embedded body and each of the first insulating layer and the second insulating layer, made of MnxSiyOz (x, y and z: numbers greater than zero).

Abstract: An engine unit with a decreased height dimension and longitudinal length comprises an engine and a throttle body assembly. The throttle body assembly includes front and rear throttle bodies formed with front and rear air cylinders and throttle valves. A fuel supply pipe is arranged between central axes of the air cylinders in a longitudinal direction to extend widthwise in a lower position than upper ends of the throttle bodies. A motor for driving throttle valves is arranged between the central axes of the air cylinders in the longitudinal direction. An axis of a rotating shaft of the motor is positioned forwardly or rearwardly of a central axis of the fuel supply pipe.