Abstract: To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once.

Abstract: A mobile communication terminal enabling the user to select or change the transmission method (bearer) during or after the edit of message data when the terminal transmits data to the party communication terminal of the same model. The mobile communication terminal has a bearer changing function of changing the bearer during or after the edit of message data and a bearer automatic judging function of automatically judging an appropriate bearer after the edit. In an embodiment, if the quantity of character data (input with keys) exceeds a predetermined value (for example 128 bytes) during the edit of message data or if a file is attached, the user is prompted to change the communication method to the DAS bearer. At the next step, if the user issues an instruction to change the bearer to the DAS bearer, the mobile communication terminal operates to make a transition to the destination setting and message data creation according to the DAS bearer.