Abstract: There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a part of a gate electrode is etched to form the TFT having a GOLD region. Thus, the TFTs having required functions can be easily formed in the driver circuit and the pixel portion, respectively, on the same substrate.
Type:
Grant
Filed:
January 8, 2004
Date of Patent:
December 5, 2006
Assignee:
Semiconductor Energy Laboratory Co., Ltd.