Abstract: A method of manufacturing a multilayer wiring substrate, which can preserve the dimensional stability of a conductor pattern at a fine pitch, solve the restriction on a process from the viewpoint of material selection, and further reduce a manufacturing cost, and a multilayer wiring substrate. A second wiring substrate formed on a supporting sheet made of metal and an adhesive layer are partially stacked on a predetermined region of a first wiring substrate by using the supporting sheet. After the lamination of the second wiring substrate, the supporting sheet is finally etched and removed. The second wiling substrate is stacked only on the portion required to be multilayered on the first wiring substrate to thereby reduce the amount of the construction material of the second wiring substrate.

Abstract: One pair of resonant electrodes is formed in a loop shape or a spiral shape in a substrate stacking direction symmetrically to each other. This allows a longitudinal space in substrate to be reduced. A first capacitor having an electrode connected to the grounding conductor layer, an electrode connected to an open-end side of the resonant electrode, and a dielectric layer is provided. A second capacitor having an electrode connected to the grounding conductor layer, an electrode connected to an open-end side of the resonant electrode, and a dielectric layer is also provided. This results in having a desired characteristic even if a length of the resonant electrode is short.

Abstract: A method of fabricating a low-noise, high-output and large-capacity magnetic recording medium compatible with the AIT3 format in which a metal magnetic film is formed by the vacuum evaporation process under supply of oxygen is disclosed. In the vacuum evaporation process, the running speed of a non-magnetic support is controlled within a range from 150 to 200 m/min, and on thus continuously fast-running, non-magnetic support, a Co magnetic thin film is formed under supply of oxygen so as to achieve a coercive force Hc of the Co magnetic thin film of 100 to 115 kA/m, and a squareness ratio of 0.79 or larger.

Abstract: A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

Abstract: The present invention is directed to a multi-layer interconnection circuit module in which plural unit wiring layers are interlayer-connected to each other through a large number of via holes so that they are laminated and formed, wherein respective unit wiring layers (8) to (12) are adapted so that photo-lithographic processing is implemented to a first insulating layer (22) formed by photosensitive insulating resin material to form via hole grooves (25), and photo-lithographic processing is implemented to a second insulating layer (23) formed by photosensitive insulating resin material on the first insulating layer (22) to form wiring grooves (27).

Abstract: The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.

Abstract: A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode and a second electrode formed on said ferroelectric layer, a plurality of the memory cells belonging to one of two or more thermal history groups having different thermal histories with regard to their production processes, data of 1 bit being to be stored in one of memory cells forming a pair, another data of 1 bit being to be stored in the other of said memory cells, a pair of said memory cells being connected to a pair of the bit lines, a pair of the bit lines being connected to a differential sense amplifier, wherein, when data stored in one of said memory cells forming a pair is read out, a reference potential is provided to the bit line connected to the other of said memory cells, when another data stored in the other of said memory cells is read out, a reference potential

Abstract: After a DC erasing is performed in a direction by permanent magnets on a servo signal recording part, servo signals are recorded in the signal recording area of the servo signal recording part by a magnetic field in the direction opposite to that of the DC erasing. Thus, in a recording method for a magnetic recording medium having a data signal recording part and the servo signal recording part on a magnetic layer, accurate servo signals can be recorded and reproduced even on the medium having the magnetic layer of 0.13 ?m or smaller.

Abstract: A liquid ejecting device can print a high quality image having an increased number of gradations without having a complex head structure, and is suitable for use in a line head. The liquid ejecting device includes a head in which liquid ejecting portions including nozzles are arranged in parallel. A droplet can be deflected at the moment of ejection from the nozzle of each of liquid ejecting portion. By controlling at least two different liquid ejecting portions in adjacent positions to eject droplets, a pixel column or a pixel is formed.

Abstract: To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: There is provided a screen, which, with a simple configuration, is capable of effectively utilizing light projected thereon and realizing an even luminance distribution on the screen. This screen has a diffusion layer whose diffusion characteristic expressed as a luminance distribution with respect to a scattering angle of incident light incident at an angle of 0° is varied such that the peak position of the luminance distribution is shifted towards a greater value of scattering angle in the direction of the central portion of the screen the greater the distance from the central portion of the screen is. The present invention also provides an optical film suitable for use in such a screen, and a manufacturing method therefor.

Abstract: A liquid ejecting device includes an ejection pattern storage unit and a read-address shifting unit. In the ejection pattern storage unit, ejection patterns corresponding to grayscale data items, each data item representing a grayscale by using the number of droplets to be delivered to pixel regions, are stored so as to be associated with the pixel regions. In each ejection period of droplets, the read-address shifting unit shifts read addresses to be supplied to the ejection pattern storage unit in response to the deflecting direction of each of ejecting outlets.

Abstract: It is an object of the invention to provide an improved solid image-pickup device which is compact in size and low in production cost. The solid image-pickup device is so formed that its semiconductor substrate has on its surface an image-pickup area having a plurality of light sensors arranged thereon. A transparent plate having the same shape and the same size as those of the semiconductor substrate when viewed as a plan view is bonded to the surface of the semiconductor substrate. A plurality of bonding pads are formed on the surface of the semiconductor substrate and arranged around the image-pickup area. Further, a plurality of through holes are formed through the semiconductor substrate, extending from the lower surfaces of the bonding pads to the back surface of the semiconductor substrate. An insulating film is tightly attached to the inner surface of each of the through holes, while another insulating film is tightly attached to the back surface of the semiconductor substrate.

Abstract: A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

Abstract: This invention is a method for manufacturing a high-frequency module device. A high-frequency circuit unit (2) in which first to third unit wiring layers (5) to (7), each having a capacitor (12) or the like at a part, are stacked and formed on flattened one surface of a dummy board (30) so that a third pattern wiring is exposed from a connection surface (2a) of an uppermost layer is mounted on a mounting surface (3a) of a base board (3) where an input/output terminal part (18) is exposed, in such a manner that the third pattern wiring and the input/output terminal part are connected with each other, and after that, the dummy board is removed. A high-frequency module device is thus manufactured.

Abstract: A ferroelectric-type nonvolatile semiconductor memory comprising: first and second memory units having bit lines, transistors for selection, sub-memory units composed of memory cells, and plate lines shared between the sub-memory units, wherein the first and second sub-memory units are formed on a same first insulating layer and another of the first and second sub-memory units are stacked over those units via a second insulating layer, each memory cell comprises a first electrode, a ferroelectric layer and a second electrode, in the first memory unit, a first common electrode is connected to the first bit line through one of said first transistors for selection, and the second electrode of each memory cell is individually connected to a shared plate line, in the second memory unit, a second common electrode is connected to the second bit line through one of said second transistors for selection, and the second electrode of each memory cell is individually connected to one of said shared plate lines, the first

Abstract: A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

Abstract: Since the pulse currents supplied to a pair of heating resistors can be controlled at once based on a color signal from a color tone detector, the discharge angle of ink droplets can be easily adjusted to an angle that provides a predetermined color tone.

Abstract: A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is arranged so as to have a portion topologically identical to one of a letter-C shape and a letter-S shape that correspond to the magnetization or polarization distribution immediately before the rotation of magnetization or polarization.