Abstract: The present invention describes a novel method for crosslinking polysilazane polymers having Si--H or N--H bonds. The method comprises mixing the polysilazane with a silazane crosslinker having at least 2 boron functional groups which can react with the Si--H or N--H bonds of the polysilazane and then facilitating crosslinking.

Abstract: The preparation of porous ceramic bodies by sintering certain curable organopolysiloxanes filled with silicon carbide powders. This process is advantageous in that the green bodies have relative high strengths and thus can be easily handled and, if desired, machined before sintering.

Abstract: Ceramic SiCO fibers are formed by spinning a mixture of a substantially linear polysiloxane fluid having unsaturated hydrocarbon substituents and a photoinitiator into a fiber, exposing the fiber to radiation, and heating the fiber in an inert environment to a temperature above about 800.degree. C.

Abstract: A silica coating is formed on an electronic substrate by applying a silazane polymer on the substrate and converting it to silica by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.

Abstract: This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.

Abstract: Disclosed are compositions which are useful for forming photodelineable coatings on substrates. The compositions contain a solvent, hydrogen silsesquioxane resin and an initiator which generates free radicals upon exposure to radiation.

Abstract: Disclosed is a method for the preparation of high molecular-weight silicone resins that have excellent storage stability in solution form. The method comprises the hydrolysis and condensation of a disiloxane and an alkyl silicate in an aqueous solution which contains at least 30 weight % alcohol and at least 5 weight % inorganic acid followed by isolation of the resin with an organic solvent which is poorly soluble in water and which has a dielectric constant of at least 4.

Abstract: An electrical or electronic circuit having at least one variable capacitor device connected in parallel relationship in the circuit by at least a pair of electrodes. The improvement constitutes the capacitor device being in the form of a silicon dioxide film derived from the oxidation of a hydrogen silsequioxane resin. The silicon dioxide film is characterized by a non-linear substantially symmetrical jV curve which includes a threshold voltage at which the silicon dioxide film undergoes a reversible transition from insulating to conducting. The jV curve further includes a regime of negative differential resistance in which an increase in the voltage applied to the silicon dioxide film above the threshold voltage causes a decrease of the current.

Abstract: The present invention refers to the deposition of thin film coatings produced by plasma-activated chemical vapor deposition of volatile fluorinated cyclic siloxanes of the structure [RR'SiO].sub.x, in which R is a hydrocarbon radical with 1-6 carbon atoms, R' is a fluorinated hydrocarbon radical with 3-10 carbon atoms, the carbon in the alpha and beta positions with respect to the silicon atom is hydrogenated and x is 3 or 4.

Abstract: Disclosed is a method for forming improved Si--O containing coatings on electronic substrate. The method comprises converting hydrogen silsesquioxane resin into a Si--O containing ceramic coating in the presence of hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.

Abstract: The present invention relates to a rapid, low-temperature method of forming a ceramic or ceramic-like coating on a substrate. It comprises coating the substrate with a solution comprising a solvent and one or more hydrolyzed or partially hydrolyzed preceramic silicon alkoxides and, optionally, a ceramic oxide precursor. The solvent is evaporated and a preceramic coating thereby deposited on the substrate. The coated substrate is heated to a temperature of between about 40.degree. to about 400.degree. C. in the presence of ozone to ceramify the ceramic or ceramic-like coating. Additional protective coatings may be applied onto the coating thus produced.

Abstract: This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.

Abstract: Silicon and oxygen containing coatings are deposited by the chemical vapor deposition of hydrogen silsesquioxane in an environment comprising nitrous oxide.

Abstract: A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.

Abstract: The present invention relates to a method of forming a ceramic or ceramic-like coating on a substrate, especially electronic devices, as well as the substrate coated thereby. The method comprises coating said substrate with a solution comprising a solvent, hydrogen silsesquioxane resin and a modifying ceramic oxide precursor selected from the group consisting of tantalum oxide precursors, niobium oxide precursors, vanadium oxide precursors, phosphorous oxide precursors and boron oxide precursors. The solvent is then evaporated to thereby deposit a preceramic coating on the substrate. The preceramic coating is then ceramified by heating the to a temperature of between about 40.degree. C. and about 1000.degree. C. This coating, moreover, may be covered by additional passivation and barrier coatings.

Abstract: This invention relates to a voltage pulse controlled variable resistor in which at least 2 leads are placed in direct contact with a material containing silica derived from hydrogen silsesquioxane. The resistor is formed by depositing a silica film derived from hydrogen silsesquioxane resin between at least two electrodes. The resistance of the component is varied by applying voltage pulses to the leads.

Abstract: The preparation of porous ceramic bodies by sintering certain curable organopolysiloxanes filled with silicon carbide powders. This process is advantageous in that the green bodies have relative high strengths and thus can be easily handled and, if desired, machined before sintering.

Abstract: This invention relates to an improved method of preparing the active telogen CF.sub.3 CFClI. The process comprises reacting chlorotrifluoroethylene, iodine, and iodine pentafluoride in the presence of an aluminum bromide catalyst at a temperature above about 25.degree. C.

Abstract: Compositions suitable for depositing coatings containing silicon and oxygen are disclosed. The compositions contain vaporized hydrogen silsesquioxane in a diluent gas.

Abstract: This invention relates to the preparation of polycrystalline silicon carbide fibers from ceramic fibers. The process involves heating the ceramic fiber in an environment containing a volatile sintering aid to a temperature sufficient to convert the ceramic fiber to the polycrystalline silicon carbide fiber.