Patents Represented by Attorney Ronald Drumheller

Find this attorney in the Justia Lawyer Directory

  • Barrier layer enhancement in metallization scheme for semiconductor device fabrication
    Patent number: 5624874
    Abstract: The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer of the right thickness of 10-20 .ANG..
    Type: Grant
    Filed: October 18, 1995
    Date of Patent: April 29, 1997
    Assignee: North America Philips Corporation
    Inventors: Sheldon C. P. Lim, Stanley C. Chu