Abstract: An exercise machine suitable for exercising a person's muscles contains a frame (100), a seat (102) situated over the frame, a seatback (104), a connection mechanism (106) for flexibly and adjustably connecting the seatback to the frame or/and the seat, and a pedaling mechanism (112) connectable to the frame. The pedaling mechanism has a pair of movable pedals (140) that revolve generally around a pedaling axis. The seatback is capable of swiveling.

Abstract: A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.