Abstract: A thin film photosensor array for an electronic camera, said array adapted to provide an electrical signal corresponding to an image projected thereon. The photosensor array is preferably fabricated as a large area matrix of thin film, small area photosensitive elements capable of providing high resolution output in response to input from conventional camera optical systems. The photosensor array can be specifically tailored to provide color output or particular spectral sensitivity.

Abstract: There is disclosed an apparatus and method for providing electrical signals representative of an image projected thereon. The apparatus includes an array of spaced apart, light sensitive elements formed from deposited semiconductor material and arranged for receiving said image. The elements are capable of effecting a detectable electrical characteristic responsive to the intensity of light received thereon from the image. The apparatus further includes isolation means for enabling the selective detection of the electrical characteristic of each element.

Abstract: An improved photovoltaic device having a preselected current carrying capacity includes an electrically conductive body, an electrically insulating layer disposed atop the conductive body and a current carrying electrically conductive pattern atop the insulating layer. The material forming the current carrying pattern infiltrates portions of the insulating layer and establishes electrical communication with the electrically conductive body in such a manner that the current carrying capacity of the device is proportional to the area which is infiltrated by the conductive material. Also disclosed herein are methods for the fabrication of the improved device.

Abstract: A power generating optical filter specially tuned to (1) transmit at least portions of selected wavelengths of incident light and (2) generate electrical power from absorbed portions of selected wavelengths of incident light.

Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Abstract: The present invention generally relates to the use of fluorescence signals obtained by selective optical excitation to detect and monitor a species present during a flow reaction or decomposition of various reactants. These reactions were analyzed in situ using a tunable laser as a selective excitation source in combination with a reactor inducing such reactions with a diffusion flame or a plasma. The resultant spectra and analysis presented herein demonstrates the detection of new compositions like SiHF in the gas phase. The invention allows for pinpoint spatial probing of the reactor without perturbing the reaction. Thus, a deposition process can be controlled by monitoring a selected species and adjusting the deposition reaction parameters in response to the species' mere detection or relative concentration.

Abstract: A retractable power supply including a solar cell for converting incident radiation to electrical energy and a base member for (1) storing the solar cell when said cell is not operatively deployed and (2) supporting the solar cell when said cell is in an operative condition. A rechargeable battery pack may be included in the base member for storing electrical energy generated by the solar cell. In one particularly noteworthy embodiment, the solar cell may be employed as a retractable window shade.

Abstract: An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes a pattern of current flow restricting material operatively disposed so as to limit the flow of electrical current between the substrate and the current collector of the device. Also disclosed are methods for the fabrication of the improved device.

Abstract: An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes: a substrate having a semiconductor body disposed thereupon, a current collecting structure such as a bus-grid structure disposed upon the semiconductor body and a transparent conductive electrode overlying the semiconductor body and the current collecting structure. The photovoltaic device may also include a layer of low electrical conductivity material disposed beneath at least portions of the current collecting structure to prevent electrical contact between said structure and defective regions of the device occuring therebelow. Also disclosed are methods for the fabrication of the improved device.

Abstract: Apparatus for and a method of confining the ionized plasma developed during the glow discharge deposition of thin film semiconductor alloy material to preselected portions of the plasma region so as to prevent etching and deposit only uniform, nonhomogeneous semiconductor alloy material.

Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor element and the potential of the plasma is controlled to alter the ion bombardment of the depositing species.The process and system include coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members. The photoconductive member includes at least a bottom blocking layer and a photoconductive layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members also can include a top blocking enhancement layer.

Abstract: An improved large area photovoltaic device includes a plurality of electrically interconnected smaller area cells. The smaller area cells each have a laterally disposed bus bar and are disposed in overlapping relationships so that the bus bar of a given cell is beneath the substrate of the adjacent overlapping cell. In this manner the surface of the resulting large area device available for photovoltaic power generation is maximized. Also disclosed herein are methods for the manufacture of the improved device.

Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.

Abstract: A p-doped microcrystalline silicon alloy material incorporated into a tandem photovoltaic device.

Abstract: A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.

Abstract: An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof.

Abstract: Disclosed is an improved photovoltaic device design and method. The design is especially useful for large area photovoltaic devices and includes a first electrode, a semiconductor body over the first electrode, a transparent electrically conductive layer over the semiconductor body and a bus grid structure in electrical contact with the conductor layer for collecting and carrying current generated by the photovoltaic device. Structure is provided for reducing the degrading effect of a low resistance current path or short in the semiconductor body.

Abstract: A method of depositing a preselected pattern of electrically conductive metallic material onto a layer of relatively transparent electrically conductive material. In its broadest form the method includes the single step of electroplating the electrically conductive metallic material onto the transparent conductive layer. The method has particular utility in electroplating metal grid patterns onto the indium tin oxide layer of an amorphous thin film photovoltaic device.

Abstract: An improved electrophotographic photoreceptor includes a blocking layer formed from a doped, microcrystalline semiconductor alloy. The blocking layer is adapted to cooperate with the photoconductive layer of the photoreceptor to prevent the injection of undesirable charge carriers into the bulk of the photoconductive layer. Also disclosed are methods for the fabrication of the improved photoreceptor.