Abstract: A semiconductor structure is described. The structure includes a trench opening formed in a semiconductor substrate having a semiconductor-on-insulator (SOI) layer and a buried insulating (BOX) layer; and a filling material formed in the trench opening, the filling material forming a “V” shape within the trench memory cell, wherein the “V” shape includes a top portion substantially adjacent to a top surface of the BOX layer. A method of fabricating the semiconductor structure is also described. The method includes forming a trench opening in a semiconductor substrate having an SOI layer and a BOX layer; laterally etching the BOX layer such that a portion of the trench opening associated with the BOX layer is substantially greater than a portion of the trench opening associated with the SOI layer; filling the trench opening with a filling material; and recessing the filling material.

Abstract: A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via opening for exposing a portion of a plurality of interconnect features; conformally depositing a first material layer over the via opening; depositing a second material layer over the first material layer, wherein the depositing overhangs a portion of the second material layer on a top portion of the via opening; and depositing a blanket layer of insulating material, where the depositing forms a plurality of fuse elements each having an airgap between the insulating material and the second material layer. The method further includes forming a plurality of electroplates in the insulator material connecting the fuse elements.

Abstract: A method of forming a vertical transistor trench memory cell having an insulating ring is provided. The method includes forming a semiconductor material region in an etched portion of a semiconductor substrate; partially etching the semiconductor material region to form a deep trench, where the deep trench extends beyond the semiconductor material region, and where the remaining of the partially etched semiconductor material region defines an insulating ring. A vertical transistor is then formed in the deep trench, such that the vertical transistor is isolated by the insulating ring. A semiconductor structure is also provided. The semiconductor structure includes a first and a second trench memory cells formed on a semiconductor substrate; and an insulating ring surrounding each of the first and second trench memory cells. The insulating ring is configured for significantly enclosing out diffusions from the trench memory cells.

Abstract: A method of isolating semiconductor devices formed on a semiconductor substrate having a silicon on insulator (SOI) layer is provided. The method includes forming at least one shallow trench area on a pad nitride layer deposited on a surface of the SOI layer, wherein the at least one shallow trench area includes an opening for exposing a portion of the SOI layer; applying diblock copolymer material over the pad nitride layer and the at least one shallow trench area; annealing the applied copolymer material to form self-organized patterns; and partially etching the shallow trench area using the diblock copolymer material as an etch mask. A semiconductor structures is also described having an isolation structure formed on a SOI layer of a semiconductor substrate the isolation structure having an oxidized substrate region; and a void region formed on the oxidized substrate region.

Abstract: A method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process is disclosed. A film of a varying input thickness is applied to semiconductor wafers moving through various film deposition paths. The deposition path of each of the semiconductor wafers is recorded. A subset of semiconductor wafers is measured and an average film input thickness corresponding to each of the film deposition paths is calculated. If semiconductor wafer in the specific film deposition path does not have measurement data, by default it uses historical measurement data. The average film input thickness of the deposition path corresponding to a given semiconductor wafer is then used to modify the recipe of a process tool, such as a Chemical Mechanical Planarization (CMP) Process Tool. An improved manufacturing process is achieved without the use of excess measurements.

Abstract: An improved data recovery circuit based on an oversampling technique to select the best data sample to be kept as the data to recover that is only based on accumulating the data edges (or transitions). The incoming serial data stream with jitter is oversampled in an oversampling circuit by means of the multiple phases of a reference clock (clk) to produce data samples. Each sample is compared to the sample(s) collected with the next clock phase(s) in an edge detector circuit to determine the presence of a data edge and the edge information is stored and accumulated in a data edge memory. A selection determination circuit uses the memorized edge information to indicate which sample is the farthest from the data edges. A selection validation circuit validates the selection to avoid false determination due to jitter and skew.

Abstract: Performing electronic voting by utilizing the ATM network and ATM machines; issuing voter cards to voters; modifying existing ATM software to recognize the voter card; maintaining a voter registration database; and making the voter registration database available to the ATM network. In use, the voter is matched to the database, and to voting options, and is restricted options specified by the database. A voting record, such as record, photo and verification, is stored in the database. A paper receipt is issued to the voter for verification.

Abstract: A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

Abstract: A secure device for electronic voting employs a write-once vote-recording medium. The medium has an initial writing mode in which data can be written but not read and a subsequent reading mode whereby data can be read but writing is permanently disabled. Once switched from the writing mode to the reading mode, it cannot be switched back. A hardware mechanism provides successful write confirmation The medium can be installed like a cartridge into a vote-recording device. The voting device provides encryption/authorization that combines polling parameters with voter information to produce a “fuse string”. For each vote, a fuse string is written to the array. The poll is “closed” by switching the medium to “read” mode, preventing further modification or tampering. To read out the results of the poll, an auditor enters “password” information to decode/decrypt the recorded information.