Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
Type:
Grant
Filed:
November 14, 2002
Date of Patent:
July 29, 2008
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr.