Abstract: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.
Type:
Grant
Filed:
November 26, 2003
Date of Patent:
November 23, 2004
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Roberto John Rovito, David Barry Rennie, Dana L. Durham
Abstract: A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and HI. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.
Type:
Grant
Filed:
October 14, 2002
Date of Patent:
August 31, 2004
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Ralph J. Ciotti, Scott Edward Beck, Eugene Joseph Karwacki, Jr.
Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.
Type:
Grant
Filed:
May 23, 2001
Date of Patent:
April 6, 2004
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Mark Leonard O'Neill, Brian Keith Peterson, Jean Louise Vincent, Raymond Nicholas Vrtis
Abstract: Aqueous solutions comprising one or more acetylenic diol type surfactants are used to improve the wettability of a substrate surface by lowering the contact angle of the aqueous developer solution are enclosed herein. In one embodiment, the aqueous solution is used to prepare the surface of the substrate prior to development of the resist coating layer.