Abstract: Semiconductor devices and fabrication methods are provided in which a capacitor dielectric is provided with phosphorus or other n-type dopants through implantation of other techniques to reduce the voltage coefficient of capacitance and/or the dielectric absorption of the capacitor.
Type:
Grant
Filed:
April 15, 2003
Date of Patent:
March 3, 2009
Assignee:
Texas Instruments Incorporated
Inventors:
Weidong Tian, Jozef Mitros, Victor Ivanov
Abstract: One anode 350 and multiple cathodes 50, 60, 70, and 80 create a large display field emission device. The use of one anode 350 facilitates an image which is seamless to the viewer. The use of multiple cathodes 50, 60, 70, and 80 allows a single image or multiple images to be displayed. The use of multiple cathodes also provides fast refresh rates and a high resolution image. Methods of fabricating and operating the large display field emission device are disclosed.
Abstract: An electron emission apparatus comprising a gate emitter 6 formed as a conductive plate having an aperture 22 and an electron emitter structure 30 formed adjacent the aperture, the electron emission structure 30 having a void defining an emission surface.