Abstract: A method for initilizing redundant circuitry of a semiconductor memory device is disclosed. The method comprises sectioning the redundant circuitry and applying an initilizing pulse to each section of redundant circuitry at a different time during power up. Such a method is useful setting the redundant circuits in a dynamic random access memory device.

Abstract: An apparatus in the form an N.sub.2 gas gun (30) improves the lapping of a semiconductor device (22) by lapping equipment (10) by an associating a predetermined location (32) on the lapping surface (20) with the semiconductor device (22). Compressed N.sub.2 gas flows through a nozzle device (30) to the predetermined location (32) on the lapping surface (20). Nozzle holder (28) holds the N.sub.2 gas gun (30) in a position for the compressed gas to blow particulate from predetermined location (32) prior to the predetermined location (32) associating with the semiconductor device (22).

Abstract: A 1M.times.2 parity DRAM is salvaged from a defective 1M.times.4 parity DRAM having two or less unrepairable memory quadrants. Circuits are designed so "any" combination of 2 good quadrants can be accessed as a result of fuse blowing and steering logic which is controlled by the fuse signals.

Abstract: A word or row line (38a, 38b) associated with at least one row of memory cells in an integrated circuit memory array (10) having a plurality of word lines is driven by a drive/boot generator signal (RLXH) by first generating this drive signal using a drive signal generator (20) that is formed in a peripheral area (14) of the chip (10). The drive signal (RLXH) is transmitted to each of a plurality of predecoders (40) that are formed within a memory cell array area (12) of the chip (10). At least one of the predecoders (40) is actuated to transmit the drive signal (RLXH) onto a selected one of a plurality of predecoder output lines (RDD0-RDD3) in response to predetermined addressing or row factor signals (RF0-RF19). The drive signal (RLXH) is transmitted on a selected predecoder output line (44) to each of a plurality of decoders (36) formed within the array area (12).

Abstract: An insulated lead frame for a semiconductor packaged device and a method of manufacturing both the insulated lead frame and the semiconductor packaged device are disclosed. The insulated lead frame has a first plurality of lead fingers and a second plurality of lead fingers. It also has the face of a power supply bus lying between the pluralities of lead fingers. An insulator covers the face of the power supply bus. An example of an insulator is a cured liquid polyimide. In a semiconductor packaged device using a lead on chip lead frame, such as a dynamic random access memory, DRAM, wire bonding that connects the power supply busses of the lead frame may first occur and the liquid insulator may afterwards be applied to the power supply busses. Alternatively, by knowing where the wire bonds will bond to the power supply busses, the liquid insulator may be applied to the power supply busses before wire bonding occurs. The bonding spots on the power supply busses are not covered with the liquid insulator.

Abstract: A comb insert for semiconductor packaged devices is disclosed. The comb is conductive and thus useful to function as a power supply bus in transferring power to the semiconductor die. A base, formed out of a conductive material, resides underneath the lead fingers of the semiconductor packaged device, electrically isolated from the lead fingers. The base has teeth extending from it, also formed out of the conductive material, that reside between the lead fingers of the semiconductor packaged device. Some of the teeth are electrically connected to the lead fingers for receiving external power. Some of the teeth are electrically connected to the bonding pads of the semiconductor die. Power is transferred from the lead fingers for receiving it, through the teeth electrically connected to these lead fingers, through the base, through the teeth electrically connected to the bonding pads, and to the semiconductor die.

Abstract: A non-volatile counter memory is provided by using a gray code scale to store counter values in a plurality of counter memories (34) comprising a counter memory group (38). Each counter memory comprises a plurality of units which store a gray coded value. The weighting of the units is changed after a predetermined number of write operations such that the number of bit transitions is spread out among the units.

Abstract: A method for handling a cursor during a graphics drawing routine that eliminates the need to insert cursor handling code into graphics function definitions. The method coordinates the placement of the cursor in screen memory with the reading out of the scan lines containing the cursor. During this time, the cursor background is saved in offscreen memory. The cursor is protected by a cursor violation region, and drawing may continue while the cursor is in screen memory so long as the cursor violation region is not infringed, in which case drawing ceases until the cursor is read out of memory. The method prevents the cursor from flickering and maximizes the availability of screen memory to the drawing routine.