Patents Represented by Attorney Rosen, Klein & Lee

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  • Method of two-step backside etching
    Patent number: 7759252
    Abstract: The present invention is related to a method of two-step backside-etching. First, a substrate with a plurality of hard masks is provided. Next, the back and the edge of the substrate are backside-etched to remove parts of the hard masks on the back and the edge of the substrate. Then, the hard masks and the substrate are patterned in sequence to form a plurality of trenches in the substrate. Finally, before performing a wet bath step, the edge of the substrate is backside-etched to remove needle structures on the edge of the substrate.
    Type: Grant
    Filed: July 10, 2007
    Date of Patent: July 20, 2010
    Assignee: Promos Technologies Inc.
    Inventor: Yeng-Peng Wang