Patents Represented by Attorney Rossi, Kimms & McDowell
  • Patent number: 8272327
    Abstract: A system for firing multiple projectiles in a parallel or diverging manner is provided. The system can comprise tail-end portions of projectiles that add structure to a cartridge, provide for efficient combustion, allow projectiles to transition from a straight configuration in the cartridge to a splayed configuration in a chamber, and ensure complete evacuation of the chamber. The system can include a tail-end portion of a particular projectile with openings that distribute energy from combustion of an ignition charge, facilitating firing of multiple projectiles. A tail-end portion of a projectile can include a ball joint upon which the body portion of the projectile moves causing an angle between the body portion and the tail-end portion. A space can exist in the body portion adjacent to the ball joint to allow off-center shifting of the body portion with respect to the ball joint.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: September 25, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Mark H. Machina, Michael Raleigh, Kristopher P. Mount, Kenneth W. Mitchell, Michael A. Bohnet
  • Patent number: 8232682
    Abstract: A bipolar pulse generator is implemented in a simple structure while providing a high efficiency design having a relatively low total size, while still allowing access by fibers used to control a photoconductive switch that activates the generator. The bipolar pulse generator includes a stacked Blumlein generator structure with an additional transmission line connected to a load at its near end and short-circuited at its distal end. An extra transmission line is positioned between the Blumlein generator's structure and the load provides specified limited gap between positive and negative sub-pulses. The bipolar pulse generator further includes a bended Blumlein generator structure, in which an existing intrinsic “stray” transmission line is used to provide the bipolar pulse. Still further, bipolar pulse generator includes stepped transmission lines, with additional switches positioned between steps, which are charged by different voltages.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: July 31, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 8212419
    Abstract: A bipolar pulse generator is implemented in a simple structure while providing a high efficiency design having a relatively low total size, while still allowing access by fibers used to control a photoconductive switch that activates the generator. The bipolar pulse generator includes a stacked Blumlein generator structure with an additional transmission line connected to a load at its near end and short-circuited at its distal end. An extra transmission line is positioned between the Blumlein generator's structure and the load provides specified limited gap between positive and negative sub-pulses. The bipolar pulse generator further includes a bended Blumlein generator structure, in which an existing intrinsic “stray” transmission line is used to provide the bipolar pulse. Still further, bipolar pulse generator includes stepped transmission lines, with additional switches positioned between steps, which are charged by different voltages.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: July 3, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 8212418
    Abstract: A bipolar pulse generator is implemented in a simple structure while providing a high efficiency design having a relatively low total size, while still allowing access by fibers used to control a photoconductive switch that activates the generator. The bipolar pulse generator includes a stacked Blumlein generator structure with an additional transmission line connected to a load at its near end and short-circuited at its distal end. An extra transmission line is positioned between the Blumlein generator's structure and the load provides specified limited gap between positive and negative sub-pulses. The bipolar pulse generator further includes a bended Blumlein generator structure, in which an existing intrinsic “stray” transmission line is used to provide the bipolar pulse. Still further, bipolar pulse generator includes stepped transmission lines, with additional switches positioned between steps, which are charged by different voltages.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: July 3, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 8183717
    Abstract: A bipolar pulse generator is implemented in a simple structure while providing a high efficiency design having a relatively low total size, while still allowing access by fibers used to control a photoconductive switch that activates the generator. The bipolar pulse generator includes a stacked Blumlein generator structure with an additional transmission line connected to a load at its near end and short-circuited at its distal end. An extra transmission line is positioned between the Blumlein generator's structure and the load provides specified limited gap between positive and negative sub-pulses. The bipolar pulse generator further includes a bended Blumlein generator structure, in which an existing intrinsic “stray” transmission line is used to provide the bipolar pulse. Still further, bipolar pulse generator includes stepped transmission lines, with additional switches positioned between steps, which are charged by different voltages.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: May 22, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 8004120
    Abstract: A bipolar pulse generator is implemented in a simple structure while providing a high efficiency design having a relatively low total size, while still allowing access by fibers used to control a photoconductive switch that activates the generator. The bipolar pulse generator includes a stacked Blumlein generator structure with an additional transmission line connected to a load at its near end and short-circuited at its distal end. An extra transmission line is positioned between the Blumlein generator's structure and the load provides specified limited gap between positive and negative sub-pulses. The bipolar pulse generator further includes a bended Blumlein generator structure, in which an existing intrinsic “stray” transmission line is used to provide the bipolar pulse. Still further, bipolar pulse generator includes stepped transmission lines, with additional switches positioned between steps, which are charged by different voltages.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: August 23, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 7987163
    Abstract: An apparatus and method is provided to dynamically search for available Web services by persistently searching a distributed multi-level UDDI registry chain, interrogating their published technical specifications and enabling the consumer to find, bind, and invoke the desired Web service in real-time and without intervention by the consumer. The search criteria includes identifying candidate published services that fall within an acceptable margin of error based on information previously published within a consumer service profile. The measure of conformance between the registry semantic map and consumer service profile is parameterized and chosen by the consumer in advance. The service profile includes an XML schema which exposes consumer profile metadata and corresponding information sets used by a rules engine for pattern matching purposes.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: July 26, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Navid Keshavarz-Nia, Charles Dickerson
  • Patent number: 7911962
    Abstract: A method and apparatus is provided for using a distributed multi-path QoS-aware routing scheme that considers basic MANET characteristics to meet transport service requirements of real-time applications and makes use of multiple discovered paths to calculate a next-hop decision. The QoS Routing scheme superimposes distributed neighborhood congestion, neighborhood density, and link stability and delay information over the multiple discovered paths when the next-hop decision is calculated.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: March 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Phong C. Khuu, Michael J. Weber, Gregory S. Sadosuk, Brian D. Loop, John Gu, Reza Ghanadan, Jessica Hsu
  • Patent number: 7902695
    Abstract: A bipolar pulse generator includes a pair of two-conductor transmission lines coupled together with a load positioned between the two transmission lines. Two segments of one transmission line are charged and switchably coupled to two segments of the other transmission line to produce a bipolar pulse on the matched load. The generator may include two transmission line structures coupled together with a load positioned between each transmission line structures. The first transmission line structure may include a stepped transmission line and an embedded transmission line segment. A switch is coupled between the embedded transmission line segment and another segment of the transmission line structure. During operation, the first transmission line structure is charged to a potential with the switch in the open position and, when the switch is closed, the charge on the first transmission line structure together with the second transmission line structure generates a bipolar pulse on the matched load.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: March 8, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Patent number: 7681504
    Abstract: Hard material can be displaced by firing a frangible projectile from a firing device. The projectile has a rear portion that engages the bore of the barrel of the firing device and a front portion that is rotatably journaled to the rear portion. The front portion can be frangible to allow maximum displacement of the hard material. Specifically, the front portion has a core and a plurality of fins extending from the core. At impact, as the fins penetrate the target, the fins separate from the core and spread radially outwardly from the core.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: March 23, 2010
    Assignee: BAE Systems Information And Electronic Systems Integration Inc.
    Inventors: Mark H. Machina, Kenneth W. Mitchell, Floyd P. Swiggett, Michael D. Burke
  • Patent number: 6989485
    Abstract: There is provided an electronic music apparatus that can make effective use of song data by separately controlling external outputting of the song data according to songs while protecting the rights. When song data is selected, the song data is read from a second ROM or a flash memory and written into a RAM together with a copyright flag CRF indicating that the song data has a copyright, when it is set to “1”. When an external output instruction is given, when the copyright flag CRF corresponding to the selected song data is set to “0”, it is judged that the song data has no copyright to be protected. Then, the song data is output according to the external output instruction. On the other hand, if CRF=1 holds, it is judged that the song data has a copyright to be protected, and then an output inhibition message is displayed to inhibit external outputting of the song data.
    Type: Grant
    Filed: August 9, 2002
    Date of Patent: January 24, 2006
    Assignee: Yamaha Corporation
    Inventor: Mitsunori Ochi
  • Patent number: 6946166
    Abstract: A magnetic recording medium according to the invention includes a nonmagnetic substrate made of a polymer resin, the nonmagnetic substrate having been treated to improve an adhesion characteristic thereof; an adhesive layer on the nonmagnetic substrate, a nonmagnetic undercoating layer on the an adhesive layer; a magnetic layer above the nonmagnetic undercoating layer; a protection layer above the magnetic layer; and a liquid lubricant layer on the protection layer. A method of manufacturing the magnetic recording medium described above includes the steps of: treating a nonmagnetic substrate to improve an adhesion characteristic thereof; forming an adhesive layer on the nonmagnetic substrate, the adhesion thereof having been improved; forming a nonmagnetic undercoating layer on the adhesive layer; forming a magnetic layer above the nonmagnetic undercoating layer; forming a protection layer above the magnetic layer; and forming a liquid lubricant layer on the protection layer.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: September 20, 2005
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Akira Iso, Takahiro Shimizu, Naoki Takizawa
  • Patent number: 6939595
    Abstract: An injection molded thermoplastic magnetic recording substrate a medium formed therewith, and a method thereof is composed of a thermoplastic or allyloxymethylstyrene type resin.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: September 6, 2005
    Assignee: Fuji Electric Device Technology Co., Ltd.
    Inventors: Youichi Tei, Kouichi Tsuda, Ryoji Kobayashi, Syoji Sakaguchi
  • Patent number: 6936352
    Abstract: A magnetic recording medium can be produced without substrate heating during sputtering. The recording medium has a substrate, an underlayer of a nonmagnetic film with a bcc structure formed on the substrate, an intermediated layer of a nonmagnetic film with an hcp structure formed on the underlayer, a magnetic layer of a magnetic film with an hcp structure formed on the intermediate layer, and a protective layer formed on the magnetic layer. Materials used for the underlayer, the intermediate layer, and the magnetic layer has spacings between principal lattice planes of the respective crystals that can be expresses as d1 (between (110) planes in the underlayer)>d2 (between (002) planes in the intermediate layer)>d3 (between (002) planes in the magnetic layer).
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: August 30, 2005
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Michio Ohsawa, Akihiro Otsuki
  • Patent number: 6930584
    Abstract: A microminiature power converter includes a semiconductor substrate on which a semiconductor integrated circuit is formed, a thin film magnetic induction element, and a capacitor. The thin film magnetic induction element includes a magnetic insulating substrate, and a solenoid coil conductor in which a first conductor is formed on a first principal plane of the magnetic insulating substrate, a second conductor is formed on a second principal plane of the magnetic insulating substrate, and a connection conductor is formed in a through hole passing through the magnetic insulating substrate are connected. A relationship of a length L of the magnetic insulating substrate in a direction vertical to a magnetic field generated by the solenoid coil and a length d of the coil conductor is d?L/2.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: August 16, 2005
    Assignee: Fuji Electric Device Technology Co., Ltd.
    Inventors: Masaharu Edo, Zenchi Hayashi
  • Patent number: 6911692
    Abstract: A MOS semiconductor device includes n?-type surface regions, which are extended portions of an n?-type drift layer 12 extended to the surface of the semiconductor chip. Each n?-type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n?-type surface regions 14 and p-type well region 13 including an n+-type region 15 is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 ?m or less.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: June 28, 2005
    Assignee: Fuji Electric Device Technology Co., LTD
    Inventors: Takashi Kobayashi, Tatsuhiko Fujihira, Hitoshi Abe, Yasushi Niimura, Masanori Inoue
  • Patent number: 6908146
    Abstract: A side member is a complement of a pair located on either side of the body of a vehicle so as to extend in the longitudinal direction of the vehicle body, passing under a dash panel located in the front part of the interior of the vehicle so as to cross the vehicle body. The side member comprises a front side member and a rear side member. The front side member extends rearward from the front of the vehicle body, beyond a dash plane which extends along a vertical wall of the dash panel. The rear side member extends forward from the rear of the vehicle body beyond the dash plane and is jointed to the front side member.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: June 21, 2005
    Assignee: Mitsubishi Jidosha Kogyo Kabushiki Kaisha
    Inventor: Tatsuzo Tomita
  • Patent number: 6903418
    Abstract: A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.
    Type: Grant
    Filed: October 3, 2003
    Date of Patent: June 7, 2005
    Assignee: Fuji Electric Device Technology Co., Ltd.
    Inventors: Susumu Iwamoto, Tatsuhiko Fujihira, Katsunori Ueno, Yasuhiko Onishi, Takahiro Sato, Tatsuji Nagaoka
  • Patent number: 6900996
    Abstract: Method and apparatus for controlling a DC-DC converter change the switching frequency of the switching devices and the on-off ratio of the switching devices. The on-off ratio can be changed in response to the output voltage and the switching frequency can be changed in response to the input voltage supplied by the DC power supply. Alternatively, the switching frequency can be changed while the on-off ratio is fixed at a certain value, and the on-off ratio can be changed while the switching frequency is fixed at a predetermined value after the switching frequency has reached the predetermined value, thereby preventing the switching frequency from exceeding the predetermined value.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: May 31, 2005
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Akihiro Odaka
  • Patent number: 6900109
    Abstract: A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. The vertical MOSFET according to the invention includes an alternating-conductivity-type drain drift layer on an n+-type drain layer as a substrate. The alternating-conductivity-type drain drift layer is formed of n-type drift current path regions and p-type partition regions alternately arranged laterally with each other. The n-type drift current path regions and p-type partition regions extend in perpendicular to n+-type drain layer. Each p-type partition region is formed by vertically connecting p-type buried diffusion unit regions Up. The n-type drift current path regions are residual regions, left after connecting p-type buried diffusion unit regions Up, with the conductivity type thereof unchanged.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: May 31, 2005
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Yasuhiko Onishi, Tatsuhiko Fujihira, Susumu Iwamoto, Takahiro Sato