Abstract: Methods and apparatus to measure small shifts and rotations of video images captured in short succession after a first reference video image is captured, and to add the sequence of captures while shifting or rotating back the shifted or rotated images, in order to improve the SNR in low light conditions.

Abstract: The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating layer by isolation of electrical elements in order to divide an active region and a passive region; forming and patterning a first conductive layer through a contact to which the active region and a capacitor are connected on the insulating layer to form a storage node; forming a dielectric layer of the capacitor on the storage node; forming and patterning a polysilicon layer on the dielectric layer to form a storage node; forming a second insulating layer on the plate node and planarizing the insulating layer by thermal treatment; forming a third conductive layer to a predetermined thickness on the planarized insulating layer; polishing and planarizing the third conductive layer by chemical-mechanical polishing techn

Abstract: A ferroelectric memory device of an MFIS FET structuring using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

Abstract: A plasma etching system is disclosed that minimizes energy loss due to the dissipation of plasma, maintaining high plasma density, and thus increasing ionization efficiency. By this construction, wafers may be etched under low pressure, which reduces the chance of impact applied to the wafers and increases the productivity of the etching system. The construction has a chamber casing having a plasma chamber into which plasma for etching wafers is injected, a reflective film coated on the outer surface of the chamber casing, the reflection film acting to insulate the plasma chamber and prevent the plasma from leaking out of the plasma chamber, and a coil wound around the chamber casing over the reflective film. A predetermined voltage is applied to the coil to generate plasma in the plasma chamber.

Abstract: In a mask for X-ray lithography and a method for manufacturing the same, a mask pattern is formed on a first silicon substrate and then an intermediate material is coated on the mask pattern in order to protect the mask pattern and further the intermediate material of the first silicon substrate is stuck on a second silicon substrate where a membrane is to be formed. Next, the second silicon substrate is thinned by methods of grinding and polishing. Here, thickness of the membrane can be controlled depending on an etching amount in unit of grinding and polishing. Therefore, since the membrane is formed after the mask pattern has been formed, not only transformation of the mask pattern generated from a process of mask pattern and breakage of the mask pattern can be prevented but also thickness of the mask pattern can be controlled as desired.

Abstract: In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high and low concentrations by performing one ion implantation process, so that the manufacturing process is simplified and the quality of the active layer is improved. Also, the ion concentration level tapers off toward the channel, so that the V.sub.gs -I.sub.ds characteristic is improved.