Abstract: The present invention provides an improved method and system for controlling packet flow through a protocol stack. The system comprises the layer manager which interfaces with each stack layer. The layer manager handles the packet flow to the stack layers. For a new packet path to be supported, only the Layer Manager needs to be modified, not the stack layers. This makes the implementation of the layers in the protocol stack easier. In an alternative embodiment, the layer manager comprises a plurality of protocol descriptor lists for supported services and uses these lists to route a packet to the appropriate stack layer. With this alternative embodiment, new stack layers may be inserted into the protocol stack without the need to modify the existing stack layers.

Abstract: The invention provides a technique for generating minimal debugging type information in a distinguished compile unit while still supporting the debugging of classes for which the distinguished compile unit is not, in this module, being built or debugged, where the debugging information for the classes has been previously compiled into one or more object modules. On detecting a reference to a type in a program, the compiler inserts code into the module it is compiling to direct the linker where to locate the debugging information object module describing that type. Usually, the object module will be located in a separate link library, so the compiler directs the linker to add the debug library to the list of libraries from which it tries to resolve symbolic references, and to add a reference to an external linkage symbol defined in the object module describing the type. The linker will have to resolve this symbol by adding the debug library into the link.

Abstract: Reduction in the short channel effect of a Flash EPROM cell is described. A method includes forming a gate structure on a substrate structure, and performing a nitrogen implant. Further included is performing device doping, wherein the nitrogen implant inhibits diffusion of dopant material into a channel of the cell. A Flash EPROM cell with reduced short channel effect includes a gate region, a drain region, and a source region, the source region and drain region defining a channel region therebetween beneath the gate region. The source region and drain region further have nitrogen implanted therein to reduce lateral diffusion of dopant material into the channel region.