Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.
Type:
Grant
Filed:
June 22, 2011
Date of Patent:
August 21, 2012
Assignee:
FEI Company
Inventors:
Janet Teshima, Daniel E. Partin, James E. Hudson
Abstract: A method of investigating a sample using Scanning Electron Microscopy (SEM), comprising the following steps: Irradiating a surface (S) of the sample using a probing electron beam in a plurality (N) of measurement sessions, each measurement session having an associated beam parameter (P) value that is chosen from a range of such values and that differs between measurement sessions; Detecting stimulated radiation emitted by the sample during each measurement session, associating a measurand (M) therewith and noting the value of this measurand for each measurement session, thus allowing compilation of a data set (D) of data pairs (Pi, Mi), where 1?i?N, wherein: A statistical Blind Source Separation (BSS) technique is employed to automatically process the data set (D) and spatially resolve it into a result set (R) of imaging pairs (Qk, Lk), in which an imaging quantity (Q) having value Qk is associated with a discrete depth level Lk referenced to the surface S.
Abstract: A stable cold field electron emitter is produced by forming a coating on an emitter base material. The coating protects the emitter from the adsorption of residual gases and from the impact of ions, so that the cold field emitter exhibits short term and long term stability at relatively high pressures and reasonable angular electron emission.
Type:
Grant
Filed:
January 10, 2011
Date of Patent:
July 10, 2012
Assignee:
FEI Company
Inventors:
Theodore Carl Tessner, II, Gregory A. Schwind, Lynwood W. Swanson
Abstract: A method and apparatus for improving call yields and reducing redundant calls while contacting patients who have not responded to reminders to schedule a return appointment, or who are due for a visit according to accepted standards of care or office policies, but have not scheduled an appointment. The patient reactivation system is queried for the next patient on the contact list, and queried again to find all patients sharing one or more phone numbers with this patient. Information required for contacting these patients to invite them to make an appointment is displayed. The user is presented one phone number at a time, and prompted to call this number and invite all listed patients to make an appointment. Results are collected, and when multiple patients are displayed, the program may prompt the user for clarification regarding which patients a given result applies to.
Type:
Grant
Filed:
December 22, 2007
Date of Patent:
June 26, 2012
Assignee:
Brevium, Inc.
Inventors:
Brian William Perrin, Brett Cornell Gerlach