Abstract: An integrated circuit chip and a semiconductor structure. The integrated circuit chip includes: a thick-body device containing a semiconductor mesa and a doped body contact; and a field effect transistor on a first sidewall of a semiconductor mesa, wherein the doped body contact is on a second sidewall of the semiconductor mesa, and wherein the semiconductor mesa is disposed between the field effect transistor and the doped body contact. The semiconductor structure includes: a buried oxide layer on a semiconductor wafer; a thin fin structure on the buried oxide layer, wherein the thin fin structure includes a first hard mask on a semiconductor fin, wherein the semiconductor fin is disposed between the first hard mask and a surface of the buried oxide layer; and a thick mesa structure on the buried oxide layer, and wherein the thick mesa structure includes a semiconductor mesa.
Type:
Grant
Filed:
July 5, 2006
Date of Patent:
January 6, 2009
Assignee:
International Business Machines Corporation
Inventors:
Wagdi W. Abadeer, Jeffrey S. Brown, David M. Fried, Robert J. Gauthier, Jr., Edward J. Nowak, Jed H. Rankin, William R. Tonti
Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
Type:
Grant
Filed:
August 26, 2003
Date of Patent:
November 6, 2007
Assignee:
International Business Machines Corporation
Inventors:
Jay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie A. Roque, Jr., Steven M. Shank, Beth A. Ward
Abstract: Air-gap insulated interconnection structures and methods of fabricating the structures, the methods including: forming a dielectric layer on a substrate; forming a capping layer on a top surface of the dielectric layer; forming a trench through the capping layer, the trench extending toward said substrate and into but not through, the dielectric layer; forming a sacrificial layer on opposing sidewalls of the trench; filling the trench with a electrical conductor; and removing a portion of the sacrificial layer from between the electrical conductor and the dielectric layer to form air-gaps.
Type:
Grant
Filed:
September 16, 2004
Date of Patent:
October 23, 2007
Assignee:
International Business Machines Corporation
Inventors:
Brent A. Anderson, Andres Bryant, Jeffrey P. Gambino, Anthony K. Stamper