Patents Represented by Attorney Schwegman, Lunberg & Woessnner, P.A.
  • Patent number: 7489019
    Abstract: A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: February 10, 2009
    Assignee: Micron Technology, Inc.
    Inventor: Paul A. Farrar