Abstract: A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.
Type:
Grant
Filed:
March 28, 2001
Date of Patent:
July 1, 2003
Assignee:
Sharp Laboratories of America, Inc.
Inventors:
Fengyan Zhang, Jer-Shen Maa, Wei-Wei Zhuang, Sheng Teng Hsu