Patents Represented by Attorney, Agent or Law Firm Scott U. Lundberg
  • Wafer trench article and process
    Patent number: 6551897
    Abstract: A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30. Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with polysilicon 34. A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride 50 cover the trenches and the adjacent device substrate regions.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: April 22, 2003
    Assignee: Intersil Americas Inc.
    Inventors: Patrick Anthony Begley, Donald Frank Hemmenway, George Bajor, Anthony Lee Rivoli, Jeanne Marie McNamara, Michael Sean Carmody, Dustin Alexander Woodbury