Patents Represented by Attorney, Agent or Law Firm Sculley, Scott, Murphy & Presser
  • Damascene double-gate FET
    Patent number: 6762101
    Abstract: A double-gate field effect transistor (DGFET) is provided using a damascene-like replacement gate processing step to create sidewall source/drain regions, oxide spacers and gate structures inside a previously formed trench. The damascene-like replacement gate processing step allows for the fabrication of a tapered transistor body region having a thicker body under the contacts which reduces access resistance.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: July 13, 2004
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Erin C. Jones, Paul M. Solomon, Hon-Sum Phillip Wong