Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
Type:
Grant
Filed:
July 8, 1998
Date of Patent:
December 25, 2001
Assignee:
International Business Machines Corporation
Inventors:
Kenneth Raymond Carter, Richard Anthony Dipietro, Craig Jon Hawker, James Lupton Hedrick, Victor YeeWay Lee, Robert Dennis Miller, Willi Volksen, Do Yeung Yoon