Patents Represented by Attorney Scully, Scott, Murphy & Preeser, P.C.

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  • CMOS compatible shallow-trench efuse structure and method
    Patent number: 7381594
    Abstract: A semiconductor structure including at least one e-fuse embedded within a trench that is located in a semiconductor substrate (bulk or semiconductor-on-insulator) is provided. In accordance with the present invention, the e-fuse is in electrical contact with a dopant region that is located within the semiconductor substrate. The present invention also provides a method of fabricating such a semiconductor structure in which the embedded e-fuse is formed substantially at the same time with the trench isolation regions.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: June 3, 2008
    Assignee: International Business Machines Corporation
    Inventors: Louis L. Hsu, Jack A. Mandelman, William R. Tonti, Chih-Chao Yang