Abstract: The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down transistors, and two pass-gate transistors. The pull-down transistors and the pass-gate transistors are substantially similar in channel widths and have substantially similar source-drain doping concentrations, while the SRAM cell has a beta ratio of at least 1.5. The substrate preferably comprises a hybrid substrate with at two isolated sets of regions, while carrier mobility in these two sets of regions differentiates by a factor of at least about 1.5. More preferably, the pull-down transistors of the SRAM cell are formed in one set of regions, and the pass-gate transistors are formed in the other set of regions, so that current flow in the pull-down transistors is larger than that in the pass-gate transistors.

Abstract: A trusted co-server, and a method of using a trusted co-server, for a service provider. The co-server executes a program such that: for multiple parties P0–Pn (where Po is said co-server), each party Pi may (optionally) provide input Ii, and then said co-server carries out N functions: Fi (io . . . In) describes what the co-server returns to party Pi. The preferred embodiment of the invention raises the trust level of the computation and data storage at the server. For instance, this invention may be witness to authenticity of certain data coming back to the client. This data can include assertions from the trusted co-server about the server content and configuration. The invention, also, can provide privacy of data going back to the server, by keeping it encrypted between the client and the co-server, and then re-encrypting it before inserting it into the server.