Patents Represented by Attorney, Agent or Law Firm Seed IP Law Goup PLLC
  • Forming of quantum dots
    Patent number: 6596555
    Abstract: A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: July 22, 2003
    Assignee: STMicroelectronics S.A.
    Inventors: Daniel Bensahel, Olivier Kermarrec, Yves Campidelli