Abstract: A method for manufacturing integrated circuit apparatuses; particularly, 1) a method for removing barrier material that lies between copper conductors in damascene interconnections, and 2) a method for removing a thin layer of silicon nitride material that has been intentionally un-etched during the formation of trenches and vias in damascene interconnect dielectric and thereby not exposing copper metal.

Abstract: A composition for sealing warped or cracked engine coolant systems is provided comprising an aqueous silicate mixture comprising 50-80% sodium silicate, based on the total amount of silicates in the mixture, and 50-20% potassium silicate, based on said total amount of silicates in the mixture; the total amount of silicates comprising about 40-50% of said mixture; a glycol in an amount of at least 10% by volume of the composition; and the balance being water. A method for sealing warped or cracked engine cooling systems is also provided.

Abstract: Smoothing surfaces of a substrate having a profile and irregular surfaces. According to one embodiment, a layer of fill material is applied to at least one surface of the substrate, wherein the fill material fills irregularities in the at least one surface. The layer of fill material is scraped from the at least one surface to provide a relatively smooth at least one surface.

Abstract: A circuit and method for reducing an input bias current flowing from an external signal source coupled to an input terminal of the circuit, the circuit being coupled to an input device having a device leakage current related to a device voltage. According to a preferred embodiment, a replica voltage source provides a replica voltage equal to the device voltage. A cancellation device is coupled to the replica voltage source so that the replica voltage is applied to the cancellation device. The cancellation device is further coupled to the input terminal for providing a cancellation current equal to the device leakage current, wherein the input bias current is equal to the difference between the device leakage current and the cancellation current.