Abstract: An improved grate for burning solid fuel having a support for the fuel, a blower for transporting air through the support, a multiplicity of orifices jets uniformly distributed across the entire area of the grate and directed through the support generally upwardly to transport preheated air toward the lower surface of the solid fuel. A trough located immediately below the support, and in close proximity to the lower surface of the solid fuel, for collecting a layer of glowing coals and providing a combustion zone in troughs between the supports. Internal air transport tubes within the support provide passageways for air to flow from the blower out of the grate. A low thermal mass heat reflector may be used with the grate for absorbing radiant energy from the combustion zone and reradiating thermal energy over the fireplace grate and out of the fireplace.

Abstract: A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally spaced from one another, a gate electrode spaced normally from the first and second injecting electrodes and located opposite the first injecting electrode, for controlling injection therefrom, and laterally offset from the second injecting electrode, and a gate dielectric layer separating the gate electrode from the first and second injecting electrodes and the charge transport layer.

Abstract: An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.

Abstract: A method for the situ measuring of a sample of a porous material having a gaseous fluid and fine granular material located within its pores and, in particular, for determining the concentration of the fine granular material within the sample. The method includes the steps of generating a first acoustic wave signal of known amplitude and phase velocity, directing the first acoustic wave signal through the sample, receiving a second acoustic wave signal representing the first acoustic wave having passed through the sample, and determining the concentration of the fine granular material in the sample from the changes between the first acoustic wave signal and the second acoustic wave signal.

Abstract: A cascode circuit for switching a high voltage thin film transistor substantially over its entire high voltage range, comprising a leaky low voltage thin film transistor connected in series with the high voltage thin film transistor, the transistors being connected between a source of high potential and a source of reference potential, and the leaky low voltage thin film transistor includes a space charge limited current shunt connected in parallel with the low voltage thin film transistor.

Abstract: A serial impact printer including a platen mounted for rotation upon a support frame, a print element having character imprinting portions disposed thereon and a print element selector for moving the print element to position a selected character imprinting portion at a printing position. A high effective mass hammer, driven toward and away from the platen in a timed manner, drives each selected character imprinting portion for deforming the platen with a printing force. A carriage mounted for reciprocating movement generally parallel to the platen, supports thereon the print element, the print element selector, the hammer and the hammer driver, and a stationary reaction bar secured to the support frame is spaced from and extends parallel to the platen. The reaction bar incudes a reaction surface against which the carriage is urged for developing the printing force as the hammer deforms the platen.

Abstract: In a device for producing an electrostatic image along a scan line of a recording medium by means of a recording device including an array of stylus electrodes arranged in a series of groups cooperable with a series of complementary electrodes, each of the stylus electrode groups cooperates with a portion of two adjacent complementary electrodes whereby writing is accomplished by imposing a charge pattern upon the recording medium in the region of a stylus electronic group when both the stylus electrode group and its cooperating pair of complementary electrodes are actuated contemporaneously. As each complementary electrode is actuated it induces a non-uniform residual potential distribution in the recording medium of a portion of the region of the next adjacent stylus electrode group.

Abstract: Apparatus for automatically spooling output media from a printer including a web supply of recording medium, a generally circular baffle arrangement for directing the recording medium into a tubular form, a drive roller for bidirectionally driving the recording medium into an out of the generally circular baffle arrangement, and means for applying a tensioning force on the recording medium between the baffle arrangement and the drive roller. The tensioning force is substantially the same whether the recording medium is being driven into or being driven out of the baffle arrangment and the surface speed of the recording medium is determined by the drive roller.

Abstract: A method of producing an electrostatic image along scan lines of a recording medium with recording means including a series of stylus electrodes arranged in a longitudinally extending array and divided into two groups, with the stylus members of each group being connected in parallel with one another along the array. A series of complementary electrodes is arranged in a longitudinally extending array and cooperates with sets of stylus electrodes for depositing a charge pattern upon a selected region of recording medium when the sets of stylus electrodes and selected complementary electrodes are pulsed contemporaneously. The method comprises the steps of delivering data, comprising a writing potential or a non-writing potential, to the stylus electrodes of both groups, and overriding certain of the data with a non-writing potential for defining the sets of stylus electrodes within the groups.

Abstract: A catch tray for receiving individual spools of output recording media, having a nominal outer diameter, which are dropped therein and which is capable of maintaining and enhancing their tight tubular form. The tray comprises a pair of walls spaced from one another by a distance less than the nominal outer diameter, and the surfaces of the wall have different coefficients of friction so that said spools of output recording media roll between the walls.

Abstract: A solid state radiation sensor array panel comprising a thick deposited radiation detector layer capable of generating electron-hole pairs in response to being irradiated, and a matrix array of transistors comprising source and drain electrode elements, a charge transport layer, and a dielectric layer disposed over one surface of the detector layer. Means is provided for establishing an electric field across the detector layer, which field is collapsible to establish a higher field in irradiated areas so as to establish a current path, between the source and drain electrode elements, through pixel areas of the charge transport layer. The currents passing through pixel areas are passed to a readout circuit for processing the radiation image information.

Abstract: A serial impact printer comprising a support frame, a platen mounted for rotation upon the support frame, a print element having character imprinting portions disposed thereon, a print element selector for moving the print element to position a selected character imprinting portion at a printing position, a marking ribbon and a lift-off ribbon. A hammer for moving a selected character imprinting portion for deforming the platen with a printing force, and means for moving the hammer toward and away from the platen. Each ribbon is selectively positionable between the print element and the platen. A carriage mounted for reciprocating movement generally parallel to the platen supports thereon the print element, the print element selector, the marking and lift-off ribbons, means for positioning the ribbons, means for advancing the marking ribbon, the hammer, and the means for moving the hammer. A single D.C.

Abstract: A media transport apparatus including a supply of recording medium, collecting means for the recording medium, a drive roller for moving the recording medium from the supply to the collecting means along a transport path, and a cutter for severing the recording medium into sections. The cutter is located between the drive roller and the collecting means and is moved in a direction substantially transverse to the direction of movement of the recording medium during severing. Deflectable fingers define a portion of the transport path in interference relationship with the cutter and are readily displaced by the cutter while continuing to provide a rigid guide for the recording medium.

Abstract: A high voltage thin film transistor comprising a charge transport layer, source and drain electrodes laterally spaced from one another and each being in low electrical resistance contact with the charge transport layer, a gate electrode spaced normally from the source and drain electrodes and extending laterally with one edge in the vicinity of the source electrode and an opposite edge located between the source and drain electrodes, and a gate dielectric layer separating the gate electrode from the source and drain electrodes and the charge transport layer, in the normal direction wherein the gate electrode and the source and drain electrodes are located on the same side of the charge transport layer.

Abstract: A thin film transistor and optical sensor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, a source electrode comprising finger elements, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, a drain electrode layer contiguous with the semiconductor layer, barrier elements for inhibiting a drain field from reaching the source electrode, and a transparent, electrically conductive drain contact member contiguous with said drain electrode layer, through which optical energy may pass to the semiconductor layer.

Abstract: A thin film transistor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, at least one finger-like source electrode, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, and a drain electrode layer contiguous with the semiconductor layer. The length of the current path between the source electrode and the drain electrode layer is defined by a first path portion located at the semiconductor/gate dielectric interface and extending, between adjacent source elements, substantially parallel to the interface, and a second path portion whose length is substantially coextensive with the thickness of the semiconductor layer.

Abstract: A thin film SOI CMOS device wherein the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor layer and are separated from the corresponding gate element and source and drain elements formed in an upper, highly doped, semiconductor layer. The layer levels are separated by two intrinsic or lightly doped semiconductor layers sandwiching a dielectric layer, so that the intrinsic or lightly doped semiconductor layer lying contiguous to the source and drain elements serves as an active channel layer and the intrinsic or lightly doped semiconductor layer lying contiguous to the gate element serves to extend the gate layer.

Abstract: An improved double implanted and aligned LDD transistor comprising a gate having a central alignment member and a pair of outboard alignment members having portions contiguous with the gate oxide layer. A lightly doped junction is aligned with the central alignment member and a heavily doped junction is aligned with the outboard alignment members.

Abstract: A thin film SOI CMOS device wheren the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor layer and are separated from the corresponding gate element and source and drain elements formed in an upper, highly doped, semiconductor layer. The layer levels are separated by two intrinsic or lightly doped semiconductor layers sandwiching a dielectric layer, so that the intrinsic or lightly doped semiconductor layer lying contiguous to the source and drain elements serves as an active channel layer and the intrinsic or lightly doped semiconductor layer lying contiguous to the gate element serves to extend the gate layer.

Abstract: A high voltage thin film transistor comprising a substrate upon which is supported a non-single crystal semiconductor active layer, spaced from a pair of conductive gate electrodes by a gate dielectric layer, wherein one of the gate electrodes in the device control electrode and the other is a dummy-drain electrode. Heavily doped semiconductor source and drain electrodes are in substantial alignment with the outer edges of the gate electrodes, the source electrode being aligned with the device control electrode and the drain electrode being aligned with the dummy-drain electrode. The active layer has intrinsic or virtually intrinsic regions thereof in opposition to the bodies of each of the gate electrodes, and an offset region, between the gate electrodes, having a lower depant level than the source and drain electrodes, which is aligned with the inner edges of the gate electrodes.