Abstract: Disclosed herein is a hydrogen storage composition comprising a catalyst composition disposed upon a storage composition; wherein the catalyst composition comprises an alloy of calcium, barium, platinum, palladium, nickel, titanium, chromium, manganese, iron, cobalt, copper, silicon, germanium, rhodium, rhodium, ruthenium, molybdenum, niobium, zirconium, yttrium, barium, lanthanum, hafnium, tungsten, rhenium, osmium, iridium, or a combination comprising at least one of the foregoing metals.

Abstract: A silicone composition is provided which comprises at least one polysiloxane or siloxane oligomer functionalized with at least one amino group and at least three functional groups capable of cross-linking wherein the polysiloxane or siloxane oligomer imparts flame retardancy on a cellulose-containing substrate. Further embodiments of the present invention include a method for making and a cellulose-substrate comprising the aforementioned silicone composition.

Abstract: The present invention provides a novel method for the preparation of diorganosilanes by disproportionation of a hydridosiloxanes comprising at least one terminal SiH group and at least one siloxane bond in the presence of Lewis acid catalysts. The reaction is both selective and occurs under mild conditions. The triaryl borane, tris(petafluorophenyl)borane, is especially suited for use as a catalyst in the reaction. Organic catalysts such as tris(pentafluorophenyl)borane are typically preferred owing to their greater solubility and stability in the reaction mixture, relative to inorganic Lewis acid catalysts. The product, diorganosilane may be isolated from the product mixture by conventional techniques such as distillation.

Abstract: A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.

Abstract: A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550° C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550° C. and about 1500° C.

Abstract: Holographic storage mediums, methods for producing the storage medium, methods for storing data in the holographic storage medium, and optical storage reading methods are described herein. The holographic storage medium can be formed from a composition comprising a thermally crosslinked polysiloxane binder; a photoactive material; and a photo-initiator, wherein the photoactive material has a concentration that remains about the same before and after a thermal cure process to form the thermally crosslinked polysiloxane binder.

Abstract: A silicone composition is provided which comprises at least one polysiloxane or silicone resin, and at least one molecular hook wherein the molecular hook comprises a hexafluorophosphate counterion, a tetrafluoroborate counterion, a triflate counterion, or combinations thereof. Further embodiments of the present invention include a method for substantially increasing the thermal stability of a silicone composition and a method for making the silicone composition.

Abstract: A curable composition includes a functionalized poly(arylene ether) resin, an acryloyl monomer, and a phosphorus flame retardant. The composition exhibits an improved balance of properties such as toughness, flame retardance, heat-resistance, and moisture resistance. It is useful, for example, as an encapsulant for semiconductor products.

Abstract: Disclosed herein is a method for making and screening a combinatorial library comprising disposing in a substrate comprising graphite or boron carbide at least one reactant, wherein the reactants are lithium, magnesium, sodium, potassium, calcium, aluminum or a combination comprising at least one of the foregoing reactants; heat treating the substrate to create a diffusion multiple; contacting the diffusion multiple with hydrogen having at least two phases; detecting any absorption of hydrogen; and/or detecting any desorption of hydrogen.

Abstract: Disclosed herein is a method for making and screening a combinatorial library, comprising disposing on a substrate comprising aluminum at least one reactant comprising lithium, germanium, magnesium, or a combination comprising at least one of the foregoing; heat treating the substrate to create a diffusion multiple having at least one phase; contacting the diffusion multiple with hydrogen; detecting any absorption of hydrogen; and/or detecting any desorption of hydrogen.

Abstract: Disclosed herein is a method for making a combinatorial library comprising disposing on a substrate comprising silicon, silicon nitride, silicon carbide or silicon boride at least one reactant, wherein the reactants are lithium, magnesium, sodium, potassium, calcium, aluminum or a combination comprising at least one of the foregoing reactants; heat treating the substrate to create a diffusion multiple having at least two phases; contacting the diffusion multiple with hydrogen; detecting any absorption of hydrogen; and/or detecting any desorption of hydrogen.

Abstract: Disclosed herein is a method for making and screening a combinatorial library comprising disposing in a substrate comprising boron, boron nitride, or boron carbide at least one reactant, wherein the reactants are lithium, magnesium, sodium, potassium, calcium, aluminum or a combination comprising at least one of the foregoing reactants; heat treating the substrate to create a diffusion multiple having at least two phases; contacting the diffusion multiple with hydrogen; detecting any absorption of hydrogen; and/or detecting any desorption of hydrogen.

Abstract: Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by luminophores. Sensors are stably attached, preferably via covalent or ionic bonds, to a surface within the device, such as the surface of the excitation source that is exposed to the sample. When a complex is formed between the sensors and the analyte, the luminophores emit light or emit light of a different wavelength, thereby signaling the presence or quantity of the analyte.

Abstract: A method and system are provided that efficiently compound high levels of inorganic filler, processing fluid and silicone polymer at a commercial rate into homogeneous filled and devolatilized silicone compositions. In the method, filled silicone compositions are compounded by compounding a filler, processing fluid and silicone polymer in a first compounding apparatus to produce a first dispersed composition and simultaneously compounding a filler, processing fluid and silicone polymer in a second compounding apparatus that shares a common extruder shaft with the first compounding apparatus to produce a second dispersed composition. The system comprises a first compounding apparatus and a sequential second compounding apparatus that shares a common shaft with the first compounding apparatus.

Abstract: There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Abstract: A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract: A composition for use as underfill material is provided. The underfill material includes a first curable transparent resin composition and a second curable fluxing resin composition. The first curable resin composition includes at least one aromatic epoxy resin in combination with a solvent, a functionalized colloidal silica dispersion, and at least one other component selected from the group consisting of cycloaliphatic epoxy monomers, aliphatic epoxy monomers, hydroxy aromatic compounds and combinations and mixtures thereof, thereby forming a solvent-modified resin. The second curable fluxing composition includes at least one epoxy resin. The combination of the two resin compositions is useful in producing underfill materials and is suitable for use as an encapsulant for electronic chips.

Abstract: Disclosed herein are data storage media and methods of making the same. The data storage media, comprises: primary surface features disposed on at least one side of said data storage media; and secondary features superimposed over at least a portion of said surface features. In one embodiment, the method for manufacturing the data storage media comprises: disposing an identifier layer onto a surface of a stamper, said stamper having primary surface features on a first side of said stamper opposite said identifier layer; forming secondary features on an exposed surface of said identifier layer; installing said stamper into a mold; injecting a molten plastic material into the mold, wherein said molten plastic physically contacts said first side; cooling said plastic to form said data storage media, such that a positive image of said primary surface features and of said secondary features are formed into at least a portion of a surface of said plastic; and releasing said data storage media from said mold.

Abstract: In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106?). Said growing includes applying a temporally varying thermal gradient (100, 100?, 102, 102?) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106?), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).