Patents Represented by Attorney Sher & Vaughn, PLLC

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  • Stack capacitor in semiconductor device and method for fabricating the same including one electrode with greater surface area
    Patent number: 7943476
    Abstract: A stack capacitor in a semiconductor device includes a first capacitor formed on and/or over a semiconductor substrate and a second capacitor formed on and/or over the first capacitor. The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode. At least two of the lower electrodes and the upper electrodes are arranged vertically with respect to each other to have the same width and/or surface area.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: May 17, 2011
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Ki-Wan Bang