Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material.

Abstract: Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with vinyl or acetylenic end groups. The polymerizable oligomer comprises polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof. A process for forming the electronic components comprising the insulator is also disclosed.

Abstract: A method of producing electronic components is disclosed wherein an insulator is in situ cured. The insulator is comprised of a polymerizable oligomer end capped with vinyl and/or acetylenic end groups which both imidize and cross-link upon cure to provide a three-dimensional dielectric network.

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

Abstract: The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

Abstract: Three-dimensional polymerization of resin glass on an underlay surface may cause uneven distribution of the layer and therefore uneven etching of the glass layer in subsequent processing. The glass remaining after an etching step can cause difficulties in further processing of the structure, such as causing metal opens in a metallization step. In order to control the three-dimensional polymerization; the underlay surface is treated with a short plasma treatment. The plasma oxidizing step renders the surface acidic, forcing the glass polymerization to occur in a two-dimensional mode thereby eliminating the threat of uneven distribution and its repercussions.

Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.

Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

Abstract: Reduction of the alkaline developer solubility of novolak-diazoquinone positive resists by acylation of phenolic hydroxyl groups of the novolak resin.