Abstract: A memory device which utilizes a plurality of memory modules coupled in parallel to a master I/O module through a single directional asymmetrical signal swing (DASS) bus. This structure provides an I/O scheme having symmetrical swing around half the supply voltage, high through-put, high data bandwidth, short access time, low latency and high noise immunity. The device utilizes improved column access circuitry including an improved address sequencing circuit and a data amplifier within each memory module. A resynchronization circuit allows the device to operate either synchronously and asynchronously using the same pins. Each memory module has independent address and command decoders to enable independent operation so that each memory module is activated by commands on the DASS bus only when a memory access operation is performed within the particular memory module. Redundant memory modules are included to replace defective memory modules, and replacement can be carried out through commands on the DASS bus.

Abstract: A method and structure for handling the refresh of a DRAM array so that the refresh has no effect on the external access. A system clock signal initiates activation and deactivation of elements of the DRAM array using a sequencer which subdivides each system clock signal period into three parts, thus providing four control signals fixed phase relationship per clock period.

Abstract: A method for forming an implantable medical device, such as a stent, covered stent, or synthetic stent graft, is provided. Protruding structures are formed on a surface of the device. The protruding structures have a central depression region surrounded by a lip. The protruding structures can have a variety of shapes, including circular and ovular shapes, or the protruding structure can form a groove. The protruding structures can be used to engage a cover. Glue can be added to the protruding structures to help secure the cover. The protruding structures can also contain a therapeutic substance or substances for release in situ. The protruding structures can be formed using a laser discharge to create a hole in the stent surface followed by directing a pressurized stream of grit at the surface.

Abstract: In a process for fabricating a radiation detector comprising the step of drifting lithium from one side of a silicon wafer, a boron diffusion layer is formed on the other side of the silicon wafer prior to the drifting step. Therefore, in spite of the tendency of the drift layer to have uneven thickness, the drift layer is allowed to be formed uniformly over the entire area. This eliminates the need to lap the other side of the wafer to expose the drift layer over the entire surface. Also, a PN junction diode is formed on the other side of the wafer, and this makes the completed detector resistant to environmental influences, as opposed to conventional radiation detectors of this type which include a surface barrier type diode.