Abstract: A wafer is polished while it is pressed against a polishing cloth through a pressure air layer, and a polished surface adjustment ring as well as the wafer are pressed against the polishing cloth. The wafer is polished in the state wherein a collapsing position of the polished surface adjustment ring with respect to the polishing cloth is set in such a way that the polishing pressure which is applied from the polishing cloth to the wafer can be constant.

Abstract: Ophthalmodynamometer (1) with a contact body for applying pressure to an eye (4) to be examined and for increasing the internal ocular pressure, in which the contact body is formed by fundus contact glass (2) which is used to observe the entire ocular fundus and is placed on the eye. Thus, the functions of applying and measuring pressure while simultaneously observing the ocular fundus are combined using the fundus contact glass (2).

Abstract: A flat belt 6 is wound around between an annular friction surface 2 at a periphery of a first rotatable member 1 and an arc-like friction surface 4 of a rocking portion 3 of a second rotatable member 5 which is relatively rotatably supported on the first rotatable member 2, and an initial tension is applied to the flat belt 6. With relative rotation movement between the rotatable members 1 and 5 in a locking or free direction, the rocking portion 3 is rocked around a rocking axis Q by the flat belt 6. By virtue of such rocking movement of the rocking portion 3, the tension of the flat belt 6 is increased up to a higher value than the initial tension or decreased down to a lower value than the initial tension. This permits connection or disconnection of the transmission of torque between the rotatable members 1 and 5 in dependence on the relative rotational direction of the rotatable members 1 and 5.

Abstract: A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

Abstract: An ionization gauge including a source of electrons; an open anode defining an anode volume, where the source of electrons is disposed outside the anode volume; a plurality of ion collector electrodes disposed within the anode volume; a plurality of axially extending anode support posts for supporting the open anode, the anode support posts being electrically connected to the open anode; and the plurality of ion collector electrodes being respectively located sufficiently close to the plurality of axially extending anode support posts so as to substantially repel the electrons from the anode support posts.

Abstract: An improved, spin-on, bead-lock filter which is particularly adapted for use as a high-pressure oil filter in a diesel engine is provided which comprises a housing containing a filter medium and having an inwardly deformed periphery, and a cover assembly including a cover plate and a retainer plate having mutually spaced apart outer edges for forming a recess that receives the inwardly deformed portion of the housing. A gasket is seated in the recess so that both a mechanical connection and a seal is formed between the cover assembly and the housing when the periphery of the housing is inwardly deformed pursuant to a bead rolling step in conformance with the assembly method of the invention.

Abstract: An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips.

Abstract: A cylinder 3 in a casing 2 is provided with a first suction chamber 34 and a nozzle part 33 having a suction passage 3d in communication with the first suction chamber 34. In the casing 2. a first piston 4 which is slidably inserted into the first suction chamber 34 and includes a second suction chamber 43 is provided with pushed in a direction of protruding from the first suction chamber 34. Further, in the casing 2, a second piston 5 slidably inserted into the second suction chamber 43 is provided with pushed with less resiliency than with respect to the first piston 4 in a direction of protruding from the second suction chamber 43. At the top part of the casing 2, an operating lever 6 is provided for operating the first and second pistons 4 and 5 to switch between a small suction position that the second piston 5 is embedded in the first piston 4 and a large suction position that the first and second pistons 4 and 5 are embedded in the cylinder 3 and the first piston 4, respectively.

Abstract: An active matrix device comprising a two signal lines (V.sub.D and V.sub.G) formed over a substrate. The first signal line is connected to the gate (G1) of a first thin film transistor (Tr1) with a crystalline silicon channel. The second signal line is connected to the drain (D1) of the first thin film transistor. The source (S1) of the first thin film transistor is connected to the gate (G2) of a second thin film transistor (Tr2) with a crystalline silicon channel. A voltage supply line (V.sub.LC) is connected to a drain (D2) of the second thin film transistor and a pixel electrode is connected to the source (S2) of the second thin film transistor. A driving circuit formed for driving the thin film transistors comprises a third film transistor (Tr3) with a crystalline silicon channel. Preferably, the channel width of the second thin film transistor is greater than the channel width of the first thin film transistor.

Abstract: An endoscopic probe includes an inspection head attached to the end of a longitudinally flexible supporting line which connects it to an operating unit provided with means for moistening the line. The supporting line (2) is rigid under axial torsion, whilst the inspection head (1) is movable in axial rotation and is formed by a demountable assemblage of two parts: a permanent part (11), attached to the end of the supporting line by means of a rotary joint (10) and housing a miniaturized photography device (26), and an interchangeable part (12), fastened rigidly to said permanent part in the extension of the latter with the aid of a demountable joint (44) and comprising a parietal (lateral or axial) orifice provided with a wide angle ocular lens (23) followed by an optical line (25) for conveying the light energy picked up by said lens toward the photography device (26).

Abstract: The invention relates to a process for producing the frame of the backrest of a motor vehicle seat from an originally straight metallic profile part which preferably has an I-shaped cross sectional area and which is bent into a U shape. In the middle part only one opening is formed in web (1), then it is closed again by the pressure of two compression jaws which move chords (2) towards one another in this middle part. In doing so opposite edge areas of the opening form joint (4). The adjacent planar areas of the web are joined to one another preferably by welding at this joint.

Abstract: A cross lever valve control device (1), especially for a lifting device such as a crane, with at least one manually actuated cross lever (2,3) which can be swivelled in first cross direction (K.sub.1) and in a second cross direction (K.sub.2), and with at least two control valves (5, 6, 9, 10) which each have one movable valve body (11, 12, 15, 16), cross lever (2, 3) being coupled to valve body (11, 16) of first control valve (5, 10) and valve body (12, 15) of second control valve (6, 9) such that first control valve (5, 10) can be actuated by moving cross lever (2, 3) in first cross direction (K.sub.1) and second control valve (6, 9) can be actuated by moving cross lever (2, 3) in second cross direction (K.sub.2).

Abstract: A tufting device for the filling tool of a brush tufting machine is provided which permits the operating stroke of the filling tool to be varied and adjusted without affecting operating speed and precision of operation. The tufting device has a guide block, a guide channel in the guide block, a tuft driver tongue driven with a reciprocating movement and movably received in the guide channel, and a header having a through channel aligned with the guide channel. The header and guide block are driven with a relative reciprocating movement towards and away from each other. The device further has a drive system with a rotating drive shaft, a cam on the drive shaft and a cam follower riding on the cam. The cam follower is driven by the cam with a reciprocating movement of a predetermined stroke length. The drive system further comprises a conversion mechanism for converting the reciprocating movement of a predetermined stroke length into a drive stroke of an adjustably variable length.

Abstract: A novel structure of TFT is described. In the structure of TFT, an anodic oxidation film, which is a material composing a gate electrode, is laid at the side of gate electrode. An electrode, which is connected to a source, drain region, is in contact with the upper surface and the side of the source, drain region, and extended on the upper surface of an insulation film which is laid on the gate electrode. In the preparation process of TFT, it can be completed by using only two sheets of mask.

Abstract: An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

Abstract: A compartmented container made from a single blank of material containing a plurality of transverse dividers positioned to receive a single longitudinal partition from the bottom of the carton such that the number of substantially uniform separate cells are doubled. The container may be easily transported in mass quantities either partially assembled or completely unassembled. From its partially assembled state, the container can be fully erected with minimal post-shipping assembly activities which do not increase regardless of the number of compartments to be contained within the container.

Abstract: A bottom-gate-type semiconductor device comprising crystalline semiconductor layers, in which the source/drain regions each have a laminate structure comprising a first conductive layer (n.sup.+ layer), a second conductive layer (n.sup.- layer) of which the resistance is higher than that of the first conductive layer, and an intrinsic or substantially intrinsic semiconductor layer (i-layer). In this, the n.sup.- layer functions as an LDD region, and the i-layer functions as an in-plane offset region. The semiconductor device has high reliability and high reproducibility, and is produced in a simple process favorable to mass-production.

Abstract: A gate insulating film 103 is oxidized by a thermal oxidation method using a gate electrode 104 as a mask. At this time, the thickness of the gate insulating film 103 becomes thicker so that the portions indicated by 106 and 107 are obtained. The thickness of an active layer becomes thin at an end 112 of a channel, so that the distance from the gate electrode becomes long by the thickness. Then the strength of an electric field between a source and drain is relaxed by this portion. In this way, a thin film transistor having improved withstand voltage characteristics and leak current characteristics is obtained.

Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

Abstract: A stethoscope shield unit comprising a plurality of substantially planar shield stacked one upon the other, each of the shields including a first surface having an adhesive applied thereto and a second surface such that adjacent shields adhere to one another with the first surface of each of these shields adhering to the second surface of an adjacent shield with a first shield of the plurality of shields being adhered to the diaphragm of the stethoscope for supporting the plurality of shields wherein an exposed shield of the plurality of shields is removed after contacting the body of a patient. A protective shield devoid of an adhesive may be positioned adjacent the first shield of the plurality of shields with the protective shield being removed prior to adhering the first shield of the stack to the diaphragm.