Abstract: A sputtering device to produce a thin film of a superconducting oxide material, in which a pair of targets with a film-forming surface portion thereon are mutually separated and facing each facing each other, so that a magnetic field is applied between the targets which are placed parallel or perpendicular to this magnetic field, whereby crystal orientation is caused to occur during the growth of the film by obtaining direct contact between this magnetic field and the film-forming surface portion.
Type:
Grant
Filed:
September 30, 1988
Date of Patent:
October 16, 1990
Assignee:
Semiconductor Energy Laboratory Co., Ltd.