Abstract: A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
Type:
Grant
Filed:
June 30, 1994
Date of Patent:
December 29, 1998
Assignee:
Semiconductor Energy Laboratory Co., Ltd.