Patents Represented by Attorney Slatsil & Matsil, L.L.P.

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  • Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate
    Patent number: 8223534
    Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: July 17, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shine Chung, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang, Hung-Sen Wang