Patents Represented by Attorney Smith, Cambrell & Russell, LLP
  • Patent number: 8340535
    Abstract: An image forming apparatus includes: a fixing unit fixing an unfixed toner image formed by an image forming unit and transferred by a transfer unit on a recording medium; a discharge unit provided above the fixing unit and discharging the recording medium; a fixing jam processing cover rotating with respect to an apparatus main body so as to open or close a part of a paper conveyance path from the fixing unit to the discharge unit; a conveyance guide member swingably provided on the fixing jam processing cover and guiding the recording medium to the discharge unit; and a supporting member having an inclined surface with which the conveyance guide member makes contact and along which, as the fixing jam processing cover is being opened, the conveyance guide member slides to become less inclined with respect to a horizontal direction.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: December 25, 2012
    Assignee: Kyocera Mita Corporation
    Inventor: Masakazu Uehara
  • Patent number: 8298955
    Abstract: This invention relates to a method for conducting an etching process which uses a plasma of a process gas. This etching process is conducted on a wafer W including a substrate 101, an underlying film 102, 103 formed on the substrate, and a film 104 to be etched that is formed on the underlying film. A main etching gas formed up of a chlorine-containing gas and an oxygen-containing gas, and a nitrogen-containing gas are used as the process gas. In this etching method, etching is conducted under a condition that an N2+/N2 intensity ratio of N2+ to N2, derived from emission spectra of the plasma, is at least 0.6.
    Type: Grant
    Filed: March 13, 2007
    Date of Patent: October 30, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Tetsuya Nishizuka
  • Patent number: 8216868
    Abstract: A substrate product is formed, and the substrate product includes a first region, a second region, a protrusion structure, and first and second scribe marks. The first region includes sections arranged in first and second axes to form an array, and the second region is provided adjacent to the array. The protrusion structure is provided in the second region; the first and second scribe marks are provided in the second region; the first and second scribe marks extend along first and second reference lines, respectively; and the first and second reference lines define boundary of the sections. After sandwiching the substrate product between films, a first cleavage of the substrate product is performed along the first scribe mark to form a first laser bar and another substrate product, and a second cleavage of the other substrate product is performed along the second scribe mark to form a second laser bar and still another substrate product.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: July 10, 2012
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Kenji Hiratsuka
  • Patent number: 7964687
    Abstract: An oxylamino group-containing compound represented by the following formula: R1—B-A-B—R2, wherein R1 represents a polymerizable group, R2 represents an oxylamino group-containing group or an oxylamino derivative-containing group, B represents an ester linkage or an amide linkage, and A represents an optionally substituted alkylene group having 2 to 12 carbon atoms.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: June 21, 2011
    Assignees: Sumitomo Bakelite Company, Ltd., National University Corporation Hokkaido University
    Inventors: Shinichiro Nishimura, Hideyuki Shimaoka
  • Patent number: 7852895
    Abstract: A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: December 14, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Yutaka Onishi
  • Patent number: 7835816
    Abstract: In a vertical-type heat processing apparatus, it is intended to stabilize the temperature of an inner wall of the reaction vessel upon loading as well as to reduce particle contamination, for example, by suppressing peeling of films attached to the inner wall. An inner wall temperature sensor is attached, in advance, to the inner wall of the reaction vessel, so as to obtain each time series data of detection values of the inner wall temperature sensor and a command value of power to be supplied to heating means. The inner wall temperature is predicted from the command value of the power obtained just before, based on the data, during an initial time of loading, so as to use the predicted value of the inner wall temperature as an object to be controlled.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: November 16, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Yuki Kataoka, Tojo Yukio
  • Patent number: 7763484
    Abstract: A method for forming a grating with an adjustable pitch and a method for forming a DFB-LD with an optical grating whose pitch is adjustable during the process are disclosed. The method of the invention; first prepares a mold with a pattern to form the grating; second, pushes the mold against the resin as deforming the mold; and third, hardens the mold. The resin with a periodic pattern whose pitch is adjustable during the process is available.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: July 27, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Masaki Yanagisawa