Abstract: A virtual network prefix is provided as a dedicated prefix for a mobile node in a domain having a plurality of subnets. The domain includes a layered network that has a quasi-micro mobility network (QMMN) and a pure-micro mobility network (PMMN). The quasi-micro mobility network (QMMN) performs prefix-based routing, and the pure-micro mobility network (PMMN) performs routing using two different routing protocols, that is, prefix-based routing and host-based routing. In each network, processing for changing a route, such as changing cache data or the like, is performed depending on how a terminal moves.
Abstract: A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.
Type:
Grant
Filed:
December 7, 2001
Date of Patent:
January 10, 2006
Assignee:
Sony Corporation
Inventors:
Akio Machida, Setsuo Usui, Dharam Pal Gosain
Abstract: An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.
Abstract: A ballast system for use with a fluorescent lamp having two filaments disposed at opposite ends of the lamp. The ballast system has a DC input terminal for connection to a DC voltage source or for receiving a rectified DC signal. The ballast system also includes a capacitor operably connected between the DC input terminal and the lamp and an inductor, wherein the lamp operably connects the capacitor in series with the inductor. The ballast system further includes a first power transistor operably connected to a junction joining the DC input terminal to the capacitor and a second power transistor operably connected to drive the first power transistor. The emitter of the first power transistor and the collector of the second power transistor are operably connected to the inductor such that the two power transistors sense a change in voltage across the inductor and control current from the DC voltage source to the capacitor in response to a change in voltage across the inductor.