Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film.

Abstract: A position detection element is provided with a photoelectric conversion unit comprising a plurality of pixels arranged on a straight line, a switch group for switching the output of pixels, the first memory group, the second memory group, the first switch group for selecting a memory from the first memory group, the second switch group for selecting a memory from the second memory group, the first signal line for transmitting a signal from the first memory group, the second signal line for transmitting a signal from the second memory group, and a differential amplifier for detecting the difference between signals inputted respectively from the first signal line and the second signal line, and these components constitute the position detection element.