Patents Represented by Attorney Sonnenschien Nath & Rosenthal LLP
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Patent number: 7824571Abstract: A polymerizable liquid crystal composition containing a polymerizable liquid crystal monomer capable of achieving hybrid alignment on an alignment processed surface and at least one of a photopolymerization initiator represented by the following general formula (1) and a photopolymerization initiator represented by the following general formula (2): wherein R1 to R6 each independently represents a hydrogen atom or a methyl group.Type: GrantFiled: June 11, 2007Date of Patent: November 2, 2010Assignee: Sony CorporationInventor: Koji Ishizaki
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Patent number: 7820823Abstract: The present invention relates to compounds of the Formula (I) that are useful antimicrobial agents and effective against a variety of multi-drug resistant bacteria.Type: GrantFiled: October 4, 2002Date of Patent: October 26, 2010Assignee: Morphochem Aktiengesellschaft Fur Kominatorische ChemiInventors: Christian Hubschwerlen, Jean-Luc Specklin
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Patent number: 7787153Abstract: An image forming apparatus capable of recording image information and additional information added separately from the image information to a photographic printing medium is disclosed. The image forming apparatus includes: image information acquisition means for acquiring the image information, additional information acquisition means for acquiring the additional information, and recording means for recording the image information acquired by the image information acquisition means and the additional information acquired by the additional information acquisition means to the photographic printing medium, wherein the recording means can record the additional information by laminating a first transparent material that absorbs light of a specific wavelength and a second transparent material that does not absorb the light on a recording surface of the photographic printing medium.Type: GrantFiled: December 18, 2006Date of Patent: August 31, 2010Assignee: Sony CorporationInventors: Naoki Takizawa, Ken Higuchi
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Patent number: 7638240Abstract: Provided are a cathode material capable of improving battery characteristics by improving its structural stability, a method of manufacturing the cathode material, and a battery using the cathode material. A cathode comprises a complex oxide represented by LiaMnbCrcAl1?b?cOd or Li1+e(MnfCrgM1?f?g)1?eOh. the values lof a through h are within a range of 1.0<a<1.6, 0.5<b+c<1, 1.8<d<2.5, 0<e<0.4, 0.2<f<0.5, 0.3<g<1, f+g<1 and 1.8<h<2.5, and M is at least one kind selected from the group consisting of Ti, Mg and Al. The crystalline structure can be stabilized by Ti, Mg or Al, and charge-discharge cycle characteristics can be improved. Moreover, the charge capacity can be improved by an excessive amount of lithium, and even after charge, a certain amount of lithium remains in the crystalline structure, so the stability of the crystalline structure can be further improved.Type: GrantFiled: March 30, 2004Date of Patent: December 29, 2009Assignee: Sony CorporationInventor: Guohua Li
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Patent number: 7567161Abstract: A coil component having a first coil, a second coil, a third coil, each of which has a different function, an upper flange, and a lower flange, and also including a drum core in which a first winding groove having the first coil wound around is formed, and a base member having a winding shaft provided in a bottom portion, wherein a second winding groove is formed between the lower flange and the bottom portion, and the second coil and the third coil are wound around this second winding groove when the drum core and the base member are assembled together.Type: GrantFiled: January 12, 2007Date of Patent: July 28, 2009Assignee: Sumida CorporationInventor: Toshimasa Monma
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Patent number: 7462892Abstract: A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high impurity concentration, and each of the heavily doped thin sublayers has an impurity concentration higher than those of semiconductor layers adjacent to each heavily doped thin sublayer.Type: GrantFiled: July 24, 2006Date of Patent: December 9, 2008Assignee: Sony CorporationInventors: Ichiro Hase, Ken Sawada, Masaya Uemura
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Patent number: 7416817Abstract: The invention provides a battery which can improve cycle characteristics by forming a more stable and stronger film on the surface of an anode active material layer. A cathode and an anode are layered with a separator in between. The anode has an anode collector and the anode active material layer. The anode active material layer contains Si, Sn, or an alloy thereof, and formed by vapor-phase method, liquid phase method, or sinter method. It is preferable that the anode active material layer is alloyed with the anode collector on at least a part of interface between the anode active material layer and the anode collector. The separator is impregnated with an electrolyte solution. The electrolyte solution contains cyclic carbonic ester having saturated bonds such as vinylene carbonate and vinylethylene carbonate as a solvent. Consequently, a strong and stable film is formed on the surface of the anode active material layer, and decomposition of the electrolyte solution in the anode is inhibited.Type: GrantFiled: November 14, 2003Date of Patent: August 26, 2008Assignee: Sony CorporationInventors: Kenichi Kawase, Tomoo Takada, Yukio Miyaki
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Patent number: 7304386Abstract: The present invention provides a semiconductor device having a multilayer wiring structure including a lower Cu buried-wiring layer, a SiC film, a SiOC film of 400 nm in thickness functioning as an interlayer insulating film, and an upper Cu buried-wiring layer electrically connected to the lower buried-wiring layer through contact plugs passing through the interlayer insulating film. The contact plugs and the upper Cu buried wiring layer are formed a single burying step of the dual damascene process. The SiOC film has a carbon content of about 12 atomic % and a relative dielectric constant of about 3.0. The upper Cu buried wiring layer is formed by burying a Cu film, through a barrier metal, in wiring grooves which are provided in the inter-wiring insulating film including a laminated film of an organic film, e.g., a PAE film of 200 nm in thickness, and a SiOC film of 150 nm in thickness.Type: GrantFiled: November 8, 2005Date of Patent: December 4, 2007Assignee: Sony CorporationInventor: Ryuichi Kanamura
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Patent number: 7000105Abstract: A system and method are disclosed for transparently providing certificate validation and other services without requiring a separate service request by either a relying customer or subscribing customer. In a preferred embodiment, after the subscribing customer digitally signs a document (e.g., a commercial document such as a purchase order), it forwards the document to a trusted messaging entity which validates the certificates of both the subscribing customer and relying customer and the respective system participants of which they are customers. If the certificates are valid, the trusted messaging entity appends a validation message to the digitally-signed document and forwards the document to the relying customer. A validation message is also preferably appended to a digitally-signed receipt from the relying customer and transmitted to the subscribing customer. In this way, both the relying customer and subscribing customer obtain certification of their respective counterparty to the transaction.Type: GrantFiled: September 10, 2001Date of Patent: February 14, 2006Assignee: Identrus, LLCInventors: Guy S. Tallent, Jr., Lawrence R. Miller, Khaja E. Ahmed