Patents Represented by Attorney Spansion LLC

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  • Memory device with barrier layer
    Patent number: 7053445
    Abstract: A memory device may include a substrate, a dielectric layer formed on the substrate and a charge storage element formed on the dielectric layer. The memory device may also include an inter-gate dielectric formed on the charge storage element, a barrier layer formed on the inter-gate dielectric and a control gate formed on the barrier layer. The barrier layer prevents reaction between the control gate and the inter-gate dielectric.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: May 30, 2006
    Assignee: Spansion LLC
    Inventors: Youseok Suh, Satoshi Torii, Lei Xue