Abstract: A semiconductor memory includes memory cells and a discharge current source for quickly discharging electric charges, in the form of a discharge current, stored along the word lines. Each of the memory cells is comprised of a load transistor pair and a multi-emitter type detection transistor pair. The discharge current source controls the discharge current by means of a bias circuit formed in the discharge current source. The bias circuit control the value of the discharge current in accordance with the value of an inverse .beta. (current amplification factor) defined by the detection transistors.

Abstract: In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on the surface of at least a portion of a region of a second conductivity type opposite to the first conductivity type, this region being within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is at least partly removed to make the window for an electrode contact to the region of the second conductivity type.