Patents Represented by Attorney, Agent or Law Firm Stallman and Pollock
  • Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger
    Patent number: 6455232
    Abstract: A method of stripping a photoresist layer in a plasma derived from an etch gas for the photoresist and a fluorine-containing polymer includes a scavenging gas for fluorine in the resist strip etch plasma. The scavenger for flourine reduces the amount of fluorine released from a fluorine-containing polymer into the resist etch plasma during polymer dissociation in the photoresist stripping step, thereby providing a photoresist stripping mechanism with reduced stop layer loss.
    Type: Grant
    Filed: April 14, 1998
    Date of Patent: September 24, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Jason Lin, Stefan Jenq, Eric Ou-Yang, Gilbert Tsai
  • Integrated self aligned contact etch
    Patent number: 6329292
    Abstract: An integrated self aligned contact process includes oxide etch with high oxide etch rate, integrated selective oxide etch and nitride liner removal with high selectivity to corner nitride with the ability to remove the bottom nitride liner, and stripping of all polymer and photoresist. C4F8 and CH2F2 are used for the high selectivity oxide etch step. The unique behavior of CH2F2 in high density plasma allows polymer protection to form on the nitride corner/sidewall while at the same time etching the bottom nitride.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: December 11, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Raymond Hung, Joseph Patrick Caulfield, Jian Ding